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KSD1408YTUFAIRCHILN/a100avaiNPN Epitaxial Silicon Transistor
KSD1408YTUFAIRCHILDN/a952avaiNPN Epitaxial Silicon Transistor


KSD1408YTU ,NPN Epitaxial Silicon TransistorApplications Complement to KSB1017TO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon ..
KSD1408YTU ,NPN Epitaxial Silicon TransistorKSD1408KSD1408Power Amplifier
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KSD1408YTU
NPN Epitaxial Silicon Transistor
KSD1408 KSD1408 Power Amplifier Applications  Complement to KSB1017 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 80 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 4 A C I Base Current 0.4 A B P Collector Dissipation (T =25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = 50mA, I = 0 80 V CEO C B I Collector Cut-off Current V = 80V, I = 0 30 μA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 100 μA EBO EB C h DC Current Gain V = 5V, I = 0.5A 40 240 FE1 CE C h V = 5V, I = 3A 15 50 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 3A. I = 0.3A 0.45 1.5 V CE C B V (on) Base-Emitter On Voltage V = 5V, I = 3A 1 1.5 V BE CE C f Current Gain Bandwidth Product V = 5V, I = 0.5A 8 MHz T CE C C Output Capacitance V = 10V, f = 1MHz 90 pF ob CB h Classification FE1 Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
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