KSD560Y ,NPN Epitaxial Silicon Darlington TransistorKSD560KSD560Low Frequency Power Amplifier Low Speed Switching Industrial Use Complement to KSB601 ..
KSD73YTSTU ,NPN Epitaxial Silicon TransistorKSD73KSD73Low Frequency High Power Amplifier Collector-Base Voltage : V = 100VCBO Collector Curr ..
KSD73YTU ,NPN Epitaxial Silicon TransistorKSD73KSD73Low Frequency High Power Amplifier Collector-Base Voltage : V = 100VCBO Collector Curr ..
KSD880-Y ,NPN Epitaxial Silicon TransistorKSD880KSD880Low Frequency Power Amplifier Complement to KSB834TO-22011.Base 2.Collector 3.Em ..
KSD880-Y ,NPN Epitaxial Silicon TransistorKSD880KSD880Low Frequency Power Amplifier Complement to KSB834TO-22011.Base 2.Collector 3.Em ..
KSD882 ,NPN Epitaxial Silicon TransistorKSD882KSD882Audio Frequency Power Amplifier Low Speed Switching Complement to KSB772TO-12611. Emit ..
L9700 ,HEX PRECISION LIMITERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Supply Voltage 20 VCCI Input Current per Chann ..
L9700D ,HEX PRECISION LIMITERL9700®HEX PRECISION LIMITERHIGH PERFORMANCE CLAMPING AT.GROUND AND POSITIVE REFERENCEVOLTAGE. FAST ..
L9700D013TR ,HEX PRECISION LIMITERL9700®HEX PRECISION LIMITERHIGH PERFORMANCE CLAMPING AT.GROUND AND POSITIVE REFERENCEVOLTAGE. FAST ..
L9700D-E ,Hex precision limiterFeatures■ High performance clamping at ground and positive reference voltage ■ Fast active clamping ..
L9703 ,OCTAL GROUND CONTACT MONITORING CIRCUITL9703OCTAL GROUND CONTACT MONITORING CIRCUIT. OPERATING DC SUPPLY VOLTAGE RANGE5V TO 25V. SUPPLY OV ..
L9703D ,OCTAL GROUND CONTACT MONITORING CIRCUITELECTRICAL CHARACTERISTICS (5V ≤ V ≤ 25V; -40°C ≤ T ≤ 125°C; 4.75V ≤ V ≤ 5.25V unless oth-S j CCerw ..
KSD560Y
NPN Epitaxial Silicon Darlington Transistor
KSD560 KSD560 Low Frequency Power Amplifier Low Speed Switching Industrial Use Complement to KSB601 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current (DC) 5 A C I *Collector Current (Pulse) 8 A CP I Base Current 0.5 A B P Collector Dissipation (T =25°C) 1.5 W C a P Collector Dissipation (T =25°C) 30 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG * PW≤10ms, Duty Cycle≤50% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = 100V, I = 0 1 μA CBO CB E h *DC Current Gain V = 2V, I = 3A 2K 6K 15K FE1 CE C h V = 2V, I = 5A 500 FE2 CE C V (sat) *Collector-Emitter Saturation Voltage I = 3A, I = 3mA 0.9 1.5 V CE C B V (sat) *Base-Emitter SaturationVoltage I = 3A, I = 3mA 1.6 2 V BE C B ⋅ t Turn ON Time V = 50V, I = 3A 1 μs ON CC ⋅ C I = - I = 3mA t Storage Time B1 B2 3.5 μs STG R = 16.7Ω L f Fall Time 1.2 μs T * Pulse Test: PW≤350μs, Duty Cycle≤2% Pulsed h Classification FE Classification R O Y h 2000 ~ 5000 3000 ~ 7000 5000 ~ 15000 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
