KSE13003TH1ATU ,NPN Silicon TransistorApplications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-22011.Base ..
KSE13005 ,NPN Silicon TransistorKSE13004/13005KSE13004/13005High Voltage Switch Mode Application• High Speed Switching• Suitable fo ..
KSE13005F ,NPN Silicon TransistorKSE13005FKSE13005FHigh Voltage Switch Mode Application• High Speed Switching• Suitable for Switchin ..
KSE13005FH1TU ,NPN Silicon TransistorKSE13005FKSE13005FHigh Voltage Switch Mode Application• High Speed Switching• Suitable for Switchin ..
KSE13005FH2TU ,NPN Silicon TransistorKSE13005FKSE13005FHigh Voltage Switch Mode Application• High Speed Switching• Suitable for Switchin ..
KSE13005FH2TU ,NPN Silicon TransistorKSE13005FKSE13005FHigh Voltage Switch Mode Application• High Speed Switching• Suitable for Switchin ..
L9733XPTR ,Octal configurable low/high side driverFunctional description . . . . . . 184.1 Configurations for outputs 1-8 . 184.1.1 Low-sid ..
L9758 ,Multiple supply for engine control
L9777 ,Low power voltage regulatorapplications where a regulated voltage is to 1 V.required. Double reset function Table 1. ..
L9777A ,Low power voltage regulatorpin configuration (option C) . .7Figure 6. VCC versus output current IVCC . . . . 11Figur ..
L9777A13TR ,Low power voltage regulatorFeaturesThe L9777 is a monolithic integrated low drop Operating DC supply voltage range 5.6 V to ..
L9777B ,Low power voltage regulatorFunctional description . . . . . . 113.1 Voltage regulator . . . 113.2 Reset . . ..
KSE13003TH1ATU
NPN Silicon Transistor
KSE13003T KSE13003T High Voltage Switch Mode Applications High Speed Switching Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 700 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 9 V EBO I Collector Current (DC) 1.5 A C I Collector Current (Pulse) 3 A CP I Base Current 0.75 A B P Collector Dissipation (T =25°C) 30 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = 5mA, I = 0 400 V CEO C B I Emitter Cut-off Current V = 9V, I = 0 10 μA EBO EB C h *DC Current Gain V = 2V, I = 0.5A 8 40 FE CE C V = 2V, I =1A 5 CE C V (sat) *Collector Emitter Saturation Voltage I = 0.5A, I = 0.1A 0.5 V CE C B I = 1A, I = 0.25A 1 V C B I = 1.5A, I = 0.5A 3 V C B V (sat) *Base Emitter Saturation Voltage I = 0.5A, I = 0.1A 1 V BE C B I = 1A, I = 0.25A 1.2 V C B C Output Capacitance V = 10V , f = 0.1MHz 21 pF ob CB f Current Gain Bandwidth Product V = 10V, I = 0.1A 4 MHz T CE C t Turn On Time V =125V, I = 1A 1.1 μs ON CC C I = 0.2A, I = - 0.2A t Storage Time B1 B2 4.0 μs STG R = 125Ω L t Fall Time 0.7 μs F * Pulse Test: Pulse Width=5ms, Duty Cycle≤10% ©2002 Rev. B, December 2002
