KSE13007 ,NPN Silicon TransistorKSE13006/13007KSE13006/13007High Voltage Switch Mode Application• High Speed Switching• Suitable fo ..
KSE13009F ,NPN Silicon TransistorKSE13008/13009KSE13008/13009High Voltage Switch Mode Application• High Speed Switching• Suitable fo ..
KSE13009FTU ,NPN Silicon TransistorKSE13008/13009KSE13008/13009High Voltage Switch Mode Application• High Speed Switching• Suitable fo ..
KSE13009L ,NPN Silicon TransistorApplications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-3P11.Base ..
KSE180 ,NPN Epitaxial Silicon TransistorApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Max ..
KSE182 ,NPN Epitaxial Silicon TransistorApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Max ..
L9777 ,Low power voltage regulatorapplications where a regulated voltage is to 1 V.required. Double reset function Table 1. ..
L9777A ,Low power voltage regulatorpin configuration (option C) . .7Figure 6. VCC versus output current IVCC . . . . 11Figur ..
L9777A13TR ,Low power voltage regulatorFeaturesThe L9777 is a monolithic integrated low drop Operating DC supply voltage range 5.6 V to ..
L9777B ,Low power voltage regulatorFunctional description . . . . . . 113.1 Voltage regulator . . . 113.2 Reset . . ..
L9777B13TR ,Low power voltage regulatorL9777Low power voltage regulator Datasheet - production data Adjustable reset threshold External ..
L9813 ,SUPER SMART MIRROR WITH EMBEDDED MCUFEATURES■ 8-18V Supply Operating Range■ 16 MHz Maximum Oscillator Frequency■ 8 MHz Maximum Internal ..
KSE13007
NPN Silicon Transistor
KSE13006/13007 KSE13006/13007 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : KSE13006 600 V CBO : KSE13007 700 V V Collector-Emitter Voltage : KSE13006 300 V CEO : KSE13007 400 V V Emitter- Base Voltage 9 V EBO I Collector Current (DC) 8 A C I Collector Current (Pulse) 16 A CP I Base Current 4 A B P Collector Dissipation (T =25°C) 80 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector- Emitter Breakdown Voltage CEO : KSE13006 I = 10mA, I = 0 300 V C B : KSE13007 400 V I Emitter Cut-off Current V = 9V, I = 0 1 mA EBO EB C h *DC Current Gain V = 5V, I = 2A 8 60 FE CE C V = 5V, I = 5A 5 30 CE C V (sat) *Collector-Emitter Saturation Voltage I = 2A, I = 0.4A 1 V CE C B I = 5A, I = 1A 2 V C B I = 8A, I = 2A 3 V C B V (sat) *Base-Emitter Saturation Voltage I = 2A, I = 0.4A 1.2 V BE C B I = 5A, I = 1A 1.6 V C B C Output Capacitance V = 10V, f = 0.1MHz 110 pF ob CB f Current Gain Bandwidth Product V = 10V, I = 0.5A 4 MHz T CE C t Turn On Time V = 125V, I = 5A 1.6 μs ON CC C I = -I = 1A t Storage Time B1 B2 3 μs STG R = 50Ω L t Fall Time 0.7 μs F * Pulse test: PW≤300μs, Duty cycle≤2% ©2000 Fairchild Semiconductor International Rev. A1, December 2000
