KSE13009L ,NPN Silicon TransistorApplications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-3P11.Base ..
KSE180 ,NPN Epitaxial Silicon TransistorApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Max ..
KSE182 ,NPN Epitaxial Silicon TransistorApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Max ..
KSE2955T ,PNP Silicon TransistorApplications• DC Current Gain Specified to I = 10 AC• High Current Gain Bandwidth Product : f = 2M ..
KSE3055T ,NPN Silicon TransistorApplications• DC Current Gain Specified to I =10AC • High Current Gain-Bandwidth Product : f = 2MHz ..
KSE3055T ,NPN Silicon TransistorKSE3055TKSE3055TGeneral Purpose and Switching
L9813 ,SUPER SMART MIRROR WITH EMBEDDED MCUFEATURES■ 8-18V Supply Operating Range■ 16 MHz Maximum Oscillator Frequency■ 8 MHz Maximum Internal ..
L9820 ,HIGH SIDE DRIVERBLOCK DIAGRAM40mΩ1/6February 1994This is advanced information on a new product now in development o ..
L9820 ,HIGH SIDE DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Max Forward Voltage 50 VdcSI Reverse Bias Curr ..
L9820 ,HIGH SIDE DRIVERL9820HIGH SIDE DRIVERADVANCE DATAOPERATING SUPPLY VOLTAGE UP TO 25VMULTIPOWER BCD TECHNOLOGYDC CURR ..
L9820D ,HIGH SIDE DRIVERL9820HIGH SIDE DRIVERADVANCE DATAOPERATING SUPPLY VOLTAGE UP TO 25VMULTIPOWER BCD TECHNOLOGYDC CURR ..
L9820D013TR ,HIGH SIDE DRIVERL9820®HIGH SIDE DRIVEROPERATING SUPPLY VOLTAGE UP TO 25VMULTIPOWER BCD TECHNOLOGYDC CURRENT 0.3AR < ..
KSE13009L
NPN Silicon Transistor
KSE13009L KSE13009L High Voltage Switch Mode Applications High Speed Switching Suitable for Switching Regulator and Motor Control TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 700 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 9 V EBO I Collector Current (DC) 12 A C I Collector Current (Pulse) 24 A CP I Base Current 6 A B P Collector Dissipation (T =25°C) 130 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) Collector-Emitter Sustaining Voltage I = 10mA, I = 0 400 V CEO C B I Emitter Cut-off Current V = 7V, I = 0 1 mA EBO EB C h DC Current Gain V = 5V, I = 5A 8 40 FE CE C V = 5V, I = 8A 6 30 CE C V (sat) Collector-Emitter Saturation Voltage I = 5A, I = 1A 1 V CE C B I = 8A, I = 1.6A 1.5 V C B I = 12A, I = 3A 3 V C B V (sat) Base-Emitter Saturation Voltage I = 5A, I = 1A 1.2 V BE C B I = 8A, I = 1.6A 1.6 V C B C Output Capacitance V = 10V , f = 0.1MHz 180 pF ob CB f Current Gain Bandwidth Product V = 10V, I = 0.5A 4 MHz T CE C t Turn ON Time V =125V, I = 8A 1.1 μs ON CC C I = - I = 1.6A t Storage Time B1 B2 3 μs STG R = 15,6Ω L t Fall Time 0.7 μs F * Pulse test: PW≤300μs, Duty cycle≤2% Pulse ©2000 Fairchild Semiconductor International Rev. A, February 2000
