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KSE3055TFAIN/a540avaiNPN Silicon Transistor
KSE3055TSECN/a100avaiNPN Silicon Transistor


KSE3055T ,NPN Silicon TransistorApplications• DC Current Gain Specified to I =10AC • High Current Gain-Bandwidth Product : f = 2MHz ..
KSE3055T ,NPN Silicon TransistorKSE3055TKSE3055TGeneral Purpose and Switching
KSE3055TTU ,NPN Silicon TransistorApplications• DC Current Gain Specified to I =10AC • High Current Gain-Bandwidth Product : f = 2MHz ..
KSE3055TTU ,NPN Silicon TransistorKSE3055TKSE3055TGeneral Purpose and Switching
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L9820 ,HIGH SIDE DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Max Forward Voltage 50 VdcSI Reverse Bias Curr ..
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KSE3055T
NPN Silicon Transistor
KSE3055T KSE3055T General Purpose and Switching Applications • DC Current Gain Specified to I =10A C • High Current Gain-Bandwidth Product : f = 2MHz (Min.) T TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector -Base Voltage 70 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 10 A C I Base Current 6 A B P Collector Dissipation (T =25°C) 75 W C C Collector Dissipation (T =25°C) 0.6 W a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I = 200mA, I = 0 60 V CEO C B I Collector Cut-off Current V = 30V, I = 0 700 μA CEO CE B I Collector Cut-off Current V = 70V, V (off) = -1.5V 1 mA CEX1 CE BE I V = 70V, V (off) = -1.5V 5 mA CEX2 CE BE @ T = 150°C C I Emitter Cut-off Current V = 5V, I = 0 5 mA EBO EB C h *DC Current Gain V = 4V, I = 4A 20 100 FE CE C V = 4V, I = 10A 5 CE C V (sat) *Collector-Emitter Saturation Voltage I = 4A, I = 0.4A 1.1 V CE C B I = 10A, I = 3.3A 8 V C B V (on) *Base-Emitter On Voltage V = 4V, I = 4A 1.8 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 500mA 2 MHz T CE C * Pulse test: PW≤300μs, duty cycle≤2% Pulse ©2000 Fairchild Semiconductor International Rev. A1, December 2000
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