KSE800 ,NPN Epitaxial Silicon Darlington TransistorKSE800/801/802/803KSE800/801/802/803Monolithic Construction With Built-in Base-Emitter Resistors• H ..
KSE800 ,NPN Epitaxial Silicon Darlington TransistorKSE800/801/802/803KSE800/801/802/803Monolithic Construction With Built-in Base-Emitter Resistors• H ..
KSE800 ,NPN Epitaxial Silicon Darlington TransistorKSE800/801/802/803KSE800/801/802/803Monolithic Construction With Built-in Base-Emitter Resistors• H ..
KSF30A60B , Low Forward Voltage drop Diode
KSF60A60B , FRD - Low Forward Voltage Drop
KSH112 ,NPN Silicon Darlington TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK11• Electrically Similar ..
L9823013TR ,OCTAL LOW-SIDE DRIVER FOR BULB, RESISTIVE AND INDUCTIVE LOADS WITH SERIAL INPUT CONTROL, OUTPUT PROTECTION AND DIAGNOSTICBLOCK DIAGRAMV16 DDSFPDOUT0-15 OL024+VDG=IOLCSBGateQ010Q0ControlQ1+IQ2 0-SCBQ3Over-Q4Temperature +O ..
L9825 ,OCTAL LOW-SIDE DRIVER FOR RESISTIVE AND INDUCTIVE LOADS WITH SERIAL/PARALLEL INPUT CONTROL,OUTPUT PROTECTION AND DIAGNOSTICL9825Octal Low-side Driver For Resistive and Inductive Loads WithSerial / Parallel Input Control, O ..
L9825 ,OCTAL LOW-SIDE DRIVER FOR RESISTIVE AND INDUCTIVE LOADS WITH SERIAL/PARALLEL INPUT CONTROL,OUTPUT PROTECTION AND DIAGNOSTICBLOCK DIAGRAMVCCVCC OUT1NON113IS OL2Latch / DriverQ1R+Diag1Fault Latch - VDGCH1NON2OUT2VQ2CC CH2Dia ..
L9825TR ,OCTAL LOW-SIDE DRIVER FOR RESISTIVE AND INDUCTIVE LOADS WITH SERIAL/PARALLEL INPUT CONTROL,OUTPUT PROTECTION AND DIAGNOSTICBLOCK DIAGRAMVCCVCC OUT1NON113IS OL2Latch / DriverQ1R+Diag1Fault Latch - VDGCH1NON2OUT2VCC Q2CH2Dia ..
L9825TR ,OCTAL LOW-SIDE DRIVER FOR RESISTIVE AND INDUCTIVE LOADS WITH SERIAL/PARALLEL INPUT CONTROL,OUTPUT PROTECTION AND DIAGNOSTICL9825Octal Low-side Driver For Resistive and Inductive Loads WithSerial / Parallel Input Control, O ..
L9826 ,OCTAL LOW-SIDE DRIVER FOR RESISTIVE AND INDUCTIVE LOADS WITH SERIAL/PARALLEL INPUT CONTROL, OUTPUT PROTECTION AND DIAGNOSTICL9826Octal Low-Side Driver for resistive and inductive loads withserial/parallel input control, out ..
KSE800
NPN Epitaxial Silicon Darlington Transistor
KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in Base- Emitter Resistors • High DC Current Gain : h = 750 (Min.) @ IC= 1.5 and 2.0A DC FE • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted Equivalent Circuit C C Symbol Parameter Value Units V Collector- Base Voltage : KSE800/801 60 V CBO : KSE802/803 80 V B V Collector-Emitter Voltage : KSE800/801 60 V CEO : KSE802/803 80 V V Emitter-Base Voltage 5 V EBO I Collector Current 4 A C R1 R2 I Base Current 0.1 A B P Collector Dissipation (T =25°C) 40 W E R11 ≅ 0kΩ C C R20 ≅ .6kΩ T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage CEO : KSE800/801 I = 50mA, I = 0 60 V C B : KSE802/803 80 V I Collector Cut-off Current CEO : KSE800/801 V = 60V, I = 0 100 μA CE B : KSE802/803 V = 80V, I = 0 100 μA CE B I Collector Cut-off Current V = Rated BV , I = 0 100 μA CBO CB CEO E V = Rated BV , I = 0 500 μA CB CEO E T = 100°C C I Emitter Cut-off Current V = 5V, I = 0 2 mA EBO BE C h DC Current Gain : KSE800/802 V = 3V, I = 1.5A 750 FE CE C : KSE801/803 V = 3V, I = 2A 750 CE C : ALL DEVICES V = 3V, I = 4A 100 CE C V (sat) Collector-Emitter Saturation Voltage CE : KSE800/802 I = 1.5A, I = 30mA 2.5 V C B : KSE801/803 I = 2A, I = 40mA 2.8 V C B : ALL DEVICES I = 4A, I = 40mA 3 V C B V (on) Base-Emitter ON Voltage BE : KSE800/802 V = 3V, I = 1.5A 2.5 V CE C : KSE801/803 V = 3V, I = 2A 2.5 V CE C : ALL DEVICES V = 3V, I = 4A 3 V CE C ©2001 Rev. A3, June 2001
