KSH122 ,NPN Silicon Darlington TransistorApplications• High DC Current Gain• Built-in a Damper Diode at E-C• Lead Formed for Surface Mount
KSH122TM ,NPN Silicon Darlington TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK11• Electrically Similar ..
KSH127 ,PNP Silicon Darlington TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK11• Electrically Similar ..
KSH127TF ,PNP Silicon Darlington TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK11• Electrically Similar ..
KSH13007 , Switch Mode series NPN silicon Power Transistor
KSH13009 , Switch Mode series NPN silicon Power Transistor
L98SI ,OCTAL SERIAL SOLENOID DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV DC Logic Supply – 0.7 7 VDDV Output Voltage in ..
L9903 ,MOTOR BRIDGE CONTROLLERBLOCK DIAGRAM10VSRCPRef erenceVCC-1ST BIAS+11Charge CP=V pumpSTH13CB112fST GH1VCCOvervoltage14Under ..
L9903TR ,MOTOR BRIDGE CONTROLLERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV , V Bootstrap voltage -0.3 to 40 VCB1 CB2I , I ..
L9904 ,MOTOR BRIDGE CONTROLLERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV , V Bootstrap voltage -0.3 to 40 VCB1 CB2I , I ..
L9904 ,MOTOR BRIDGE CONTROLLERBLOCK DIAGRAM10VSRCPRef erenceVCC-1ST BIAS+11Charge CP=V pumpSTH13CB112fST GH1VCCOvervoltage14Under ..
L9904TR ,MOTOR BRIDGE CONTROLLERBlock Diagram10VSRCPReferenceVCC-1ST BIAS+11Charge CP=V pumpSTH13CB112fST GH1VCCOvervoltage14Underv ..
KSH122
NPN Silicon Darlington Transistor
KSH122 KSH122 D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) D-PAK I-PAK 11 • Electrically Similar to Popular TIP122 1.Base 2.Collector 3.Emitter • Complement to KSH127 NPN Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Equivalent Circuit C Symbol Parameter Value Units V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 100 V CEO B V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 8 A C I Collector Current (Pulse) 16 A CP I Base Current 120 mA B R1 R2 P Collector Dissipation (T =25°C) 20 W C C E R18 ≅ kΩ Collector Dissipation (T =25°C) 1.75 W a R20 ≅ .12kΩ T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) *Collector-Emitter Sustaining Voltage I = 30mA, I = 0 100 V CEO C B I Collector Cut-off Current V = 50V, I =0 10 μA CEO CE B I Collector Cut-off Current V = 100V, I = 0 10 μA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 2 mA EBO EB C h *DC Current Gain V = 4V, I = 4A 1000 12K FE CE C V = 4V, V = 8A 100 CE EB V (sat) *Collector-Emitter Saturation Voltage I = 4A, I = 16mA 2 V CE C B I = 8A, I = 80mA 4 V C B V (sat) *Base-Emitter Saturation Voltage I = 8A, I = 80mA 4.5 V BE C B V (on) *Base-Emitter ON Voltage V = 4V, I = 4A 2.8 V BE CE C C Output Capacitance V = 10V, I = 0 200 pF ob CB E f= 0.1MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A3, June 2001
