KSH32C ,PNP Epitaxial Silicon TransistorKSH32/32CKSH32/32CGeneral Purpose Amplifier Low Speed Switching
KSH32C ,PNP Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
KSH32-CTF ,PNP Epitaxial Silicon TransistorApplications• Lead Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
KSH340 ,NPN Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “- I” Suffix)D-PAK I-PAK111.Base 2.Collector ..
KSH340TF ,NPN Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “- I” Suffix)D-PAK I-PAK111.Base 2.Collector ..
KSH350 ,PNP Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “- I” Suffix)D-PAK I-PAK111.Base 2.Collector ..
L9942 ,Stepper Motor Driver for Bipolar Motors with microstepping & programmable current profileFunctional description of the logic with SPI . . . . . 214.1 Motor stepping clock input (STEP) ..
L9942XP1 ,Stepper Motor Driver for Bipolar Motors with microstepping & programmable current profileelectrical characteristics . . . . . . . 286.1 Inputs: CSN, CLK, STEP, EN and DI . . . . 286. ..
L9942XP1TR ,Stepper Motor Driver for Bipolar Motors with microstepping & programmable current profileFeatures■ Two full bridges for max. 1.3 A load(R = 500 m) DSON■ Programmable current waveform with ..
L9947 ,QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVERELECTRICAL CHARACTERISTICS ° (VS = 8 to 16V; VCC = 4.5 to 5.5V; Tj = -40 to 150 C;unless other-wise ..
L9947L ,QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVERELECTRICAL CHARACTERISTICS ° (VS = 8 to 16V; VCC = 4.5 to 5.5V; Tj = -40 to 150 C;unless other-wise ..
L9947S ,QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVERfunctional description (pag....)|I | Output Current Limitation to 0.67 2 AOUT2 Supply or GND|I | Ou ..
KSH32C
PNP Epitaxial Silicon Transistor
KSH32/32C KSH32/32C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) D-PAK I-PAK 11 • Electrically Similar to Popular TIP32 and TIP32C 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : KSH32 - 40 V CBO : KSH32C - 100 V V Collector-Emitter Voltage : KSH32 - 40 V CEO : KSH32C - 100 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 3 A C I Collector Current (Pulse) - 5 A CP I Base Current - 1 A B P Collector Dissipation (T =25°C) 15 W C C Collector Dissipation (T =25°C) 1.56 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : KSH32 I = - 30mA, I = 0 -40 V C B : KSH32C -100 V I Collector Cut-off Current CEO -50 : KSH32 V = - 40V, I = 0 μA CE B : KSH32C V = - 60V, I = 0 -50 μA CE B I Collector Cut-off Current CES : KSH32 V = - 40V, V = 0 -20 μA CE BE : KSH32C V = - 100V, V = 0 -20 μA CE BE I Emitter Cut-off Current V = - 5V, I = 0 -1 mA EBO BE C 25 h * DC Current Gain V = - 4V, I = - 1A FE CE C V = - 4V, I = - 3A 10 50 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 3, I = - 375mA -1.2 V CE C B V (on) * Base-Emitter ON Voltage V = - 4A, I = - 3A -1.8 V BE CE C f Current Gain Bandwidth Product V = -10V, I = - 500mA 3 MHz T CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A3, June 2001
