KSP13-TA ,NPN Epitaxial Silicon Darlington TransistorKSP13/14KSP13/14Darlington Transistor• Collector-Emitter Voltage: V =30VCES• Collector Power Dissip ..
KSP14 ,NPN Epitaxial Silicon Darlington TransistorKSP13/14KSP13/14Darlington Transistor• Collector-Emitter Voltage: V =30VCES• Collector Power Dissip ..
KSP14TA ,NPN Epitaxial Silicon Darlington TransistorKSP13/14KSP13/14Darlington Transistor• Collector-Emitter Voltage: V =30VCES• Collector Power Dissip ..
KSP2222 , General Purpose Transistor
KSP2222A ,NPN Epitaxial Silicon TransistorKSP2222AKSP2222AGeneral Purpose Transistor• Collector-Emitter Voltage: V = 40VCEO• Collector Power ..
KSP2222ABU ,NPN Epitaxial Silicon TransistorKSP2222AKSP2222AGeneral Purpose Transistor• Collector-Emitter Voltage: V = 40VCEO• Collector Power ..
LA1061M ,Antenna Switching ControllerFeatures• Uses Sanyo's proprietary AGC amplifier and detector, providing accurate detection of mult ..
LA1130 ,AM Tuner for Car RadioFeatures• Good space factor due to single-end package.• Easy to design printed circuit pattern due ..
LA1135 ,AM Tuner System for Car Radios and Home StereosOrdering number: EN1272EMonolithic Linear ICLA1135, 1135MAM Tuner System forCar Radios and Home Ste ..
LA1135M ,AM Tuner System for Car Radios and Home StereosFeatures[LA1135M].Excellent cross modulation characteristics: Meets therequirements for preventing ..
LA1136N ,AM Tuners for Car Radios and Home StereosFeatures.The LA1136N/NM and LA1137N/NM are high-performance Excellent cross modulation characterist ..
LA1136N ,AM Tuners for Car Radios and Home StereosOrdering number: EN3507Monolithic Linear ICLA1136N, 1136NM, 1137N, 1137NMAM Tuners for Car Radios a ..
KSP13BU-KSP13TA-KSP13-TA-KSP14TA
NPN Epitaxial Silicon Darlington Transistor
KSP13/14 KSP13/14 Darlington Transistor • Collector-Emitter Voltage: V =30V CES • Collector Power Dissipation: P (max)=625mW C TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 30 V CES V Emitter-Base Voltage 10 V EBO I Collector Current 500 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I =100μA, I =0 30 V CES C B I Collector Cut-off Current V =30V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =10V, I =0 100 nA EBO EB C h * DC Current Gain FE : KSP13 V =5V, I =10mA 5K CE C : KSP14 10K : KSP13 V =5V, I =100mA 10K CE C : KSP14 20K V (sat) Collector-Emitter Saturation Voltage I =100mA, I =0.1mA 1.5 V CE C B V (on) Base-Emitter On Voltage V =5V, I =100mA 2.0 V BE CE C f Current Gain Bandwidth Product V =5V, I =10mA 125 MHz T CE C f=100MHz * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% ©2002 Rev. A2, September 2002
