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KSP5179SAMSUNGN/a3000avaiNPN Epitaxial Silicon Transistor


KSP5179 ,NPN Epitaxial Silicon TransistorKSP5179KSP5179High Frequency TransistorTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silic ..
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KSP5179
NPN Epitaxial Silicon Transistor
KSP5179 KSP5179 High Frequency Transistor TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 20 V CBO V Collector-Emitter Voltage 12 V CEO V Emitter-Base Voltage 2.5 V EBO I Collector Current 50 mA C P Collector Power Dissipation (T =25°C) 200 mW C a Derate above 25°C1.14mW/°C P Collector Power Dissipation (T =25°C) 300 mW C C Derate above 25°C1.71mW/°C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage I =3mA, I =0 12 V CEO C B BV Collector-Base Breakdown Voltage I =0.001mA, I =0 20 V CBO C E BV Emitter-Base Breakdown Voltage I =0.01, I =0 2.5 V EBO E C 0.02 μA I Collector Cut-off Current V =15V, I =0 CBO CB E V =15V, I =0, Ta=150°C 1 μA CB E h DC Current Gain V =1V, I =3mA 25 250 FE CB C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.4 V CE C B V (sat) Base-Emitter Saturation Voltage I =10mA, I =1mA 1 V BE C B f Current Gain Bandwidth Product V =6V, I =5mA 900 2000 MHz T CE C C Output Capacitance V =10V, I =0, f=0.1 to1 MHz 1 pF ob CB E h Small Signal Current Gain V =6V, I =2mA, f=1KHz 25 300 fe CE C C Collector Base Time Constant V =6V, I =2mA, f=31.9MHz 3 14 ps c ⋅ rbb’ CE E NF Noise Figure V =6V, I =1.5mA, f=200MHz 4.5 dB CE C R =50Ω S G Power Gain V =6V, I =5mA, f=200MHz 15 dB PE CE C ©2001 Rev. A1, July 2001
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