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KSR1009FairchildN/a1800avaiNPN Epitaxial Silicon Transistor


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KSR1009
NPN Epitaxial Silicon Transistor
KSR1009 KSR1009 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to KSR2009 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit C R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 40 V CBO C E BV Collector-Emitter Breakdown Voltage I =1mA, I =0 40 V CEO E B I Collector Cut-off Current V =30V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =1mA 100 600 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.3 V CE C B C Output Capacitance V =10V, I =0 3.70 pF ob CB E f=1MHz f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C R Input Resistor 3.2 4.7 6.2 KΩ ©2001 Rev. A2, July 2001
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