KSR2205 ,PNP Epitaxial Silicon TransistorKSR2205KSR2205Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR2205 ,PNP Epitaxial Silicon TransistorKSR2205KSR2205Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR2205 ,PNP Epitaxial Silicon TransistorKSR2205KSR2205Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR2210 ,PNP Epitaxial Silicon TransistorKSR2210KSR2210Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSS04S , DIP Switch
KST05 ,NPN Epitaxial Silicon TransistorKST05/06KST05/06Driver Transistor• Collector-Emitter Voltage: V = KST05: 60V CEO 3KST06: 80V• Coll ..
LA1816 ,Single-Chip AM/FM, MPX Tuner System for Headphone Stereos, Radio-Cassette RecordersOperating Characteristics at Ta = 25°C , V = 3 V, See specified Test CircuitCCParameter Symbol Cond ..
LA1816M ,Single-Chip AM/FM, MPX Tuner System for Headphone Stereos, Radio-Cassette RecordersFeatures.Contains FM tuner,AM tuner, MPX on a single chip..Adjustment-free FM detector andAM IF.Min ..
LA1823 ,Single-Chip Tuner IC for Use in Radio Cassette RecorderOperating Characteristics at Ta = 25 OC, VCC =. 4.5 V, in the specified test circuit usingthe IC59- ..
LA1823M , Single-Chip Tuner ICs for Use in Radio Cassette Recorder
LA1824 ,Single Chip Tuner IC for Use in Radio/Cassette Products with Manual TuningOperating Characteristics at Ta = 25 °C, V = 4.5 V, in the specified test usingCC the IC179-2 socke ..
LA1826 ,AM/FM Tuner with MPX Stereo DemodulatorBLOCK DIAGRAMFM antennaC,NU orFM uéuMalorI HF $9” T _ -- "= . " T _, v-SM . High! Lell_ .--o -HF--- ..
KSR2205
PNP Epitaxial Silicon Transistor
KSR2205 KSR2205 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R =4.7KΩ, R =10KΩ) 1 2 • Complement to KSR1205 TO-92S 1 1.Emitter 2. Collector 3. Base Equivalent Circuit C R1 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -10 V EBO I Collector Current -100 mA C P Collector Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -10μA, I =0 -50 V CBO C E BV Collector-Emitter Breakdown Voltage I = -100μA, I =0 -50 V CEO C B I Collector Cut-off Current V = -40V, I =0 -0.1 μA CBO CB E h DC Current Gain V = -5V, I = -5mA 30 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -0.3 V CE C B f Current Gain Bandwidth Product V = -10V, I =0 5.5 pF T CB E f=1.0MHz C Output Capacitance V = -10V, I = -5mA 200 MHz ob CE C V (off) Input Off Voltage V = -5V, I = -100μA-0.3 V I CE C V (on) Input On Voltage V = -0.3V, I = -20mA -2.5 V I CE C R Input Resistor 3.2 4.7 6.2 KΩ 1 R /R Resistor Ratio 0.42 0.47 0.52 1 2 ©2001 Rev. A1, July 2001
