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KST64MTFFAIRCHILN/a3000avaiPNP Epitaxial Silicon Transistor


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KST64MTF
PNP Epitaxial Silicon Transistor
KST63/64 KST63/64 Darlington Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -30 V CBO V Collector-Emitter Voltage -30 V CES V Emitter-Base Voltage -10 V EBO I Collector Current -500 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I = -100, V =0 -30 V CES C BE I Collector Cut-off Current V = -30V, I =0 -100 nA CBO CE E I Emitter Cut-off Current V = -10V, I =0 -100 nA EBO EB C h * DC Current Gain FE : KST63 V = -5V, I = -10mA 5K CE C : KST64 10K : KST63 V = -5V, I = -100mA 10K CE C : K ST64 20K V (sat) Collector-Emitter Saturation Voltage I = -100mA, I = -0.1mA -1.5 V CE C B V (on) Base-Emitter On Voltage V = -5V, I = -100mA -2.0 V BE CE C f Current Gain Bandwidth Product V = -5V, I = -10mA 125 MHz T CE C f=100MHz * Pulse test: PW≤300μs, Duty Cycle≤2% Marking Code Type KST63 KST64 Mark 2U 2V Marking 2U ©2002 Rev. A2, November 2002
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