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NTB45N06LONN/a10000avaiPower MOSFET 45 Amps, 60 Volts, Logic Level
NTB45N06LT4ONN/a150avaiPower MOSFET 45 Amps, 60 Volts, Logic Level
NTB45N06LT4GONN/a15200avaiPower MOSFET 45 Amps, 60 Volts, Logic Level


NTB45N06LT4G ,Power MOSFET 45 Amps, 60 Volts, Logic LevelMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain−to−Source Voltage V ..
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NTB45N06L-NTB45N06LT4-NTB45N06LT4G
Power MOSFET 45 Amps, 60 Volts, Logic Level
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 3) V Vdc(BR)DSS(V = 0 Vdc, I = 250 Adc) 60 67 −GS DTemperature Coefficient (Positive) − 67.2 − mV/°CZero Gate Voltage Drain Current I AdcDSS(V = 60 Vdc, V = 0 Vdc) − − 1.0DS GS(V = 60 Vdc, V = 0 Vdc, T = 150°C) − − 10DS GS JGate−Body Leakage Current (V = ±15 Vdc, V = 0 Vdc) I − − ±100 nAdcGS DS GSSON CHARACTERISTICS (Note 4)Gate Threshold Voltage (Note 4) V VdcGS(th)(V = V , I = 250 Adc) 1.0 1.8 2.0DS GS DThreshold Temperature Coefficient (Negative) − 4.7 − mV/°CStatic Drain−to−Source On−Resistance (Note 4) R mDS(on)(V = 5.0 Vdc, I = 22.5 Adc) − 23 28GS DStatic Drain−to−Source On−Voltage (Note 4) V VdcDS(on)(V = 5.0 Vdc, I = 45 Adc) − 1.03 1.51GS D(V = 5.0 Vdc, I = 22.5 Adc, T = 150°C) − 0.93 −GS D JForward Transconductance (Note 4) (V = 8.0 Vdc, I = 12 Adc) g − 22.8 − mhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C − 1212 1700 pFiss(V (V = 25 Vdc, V 25 Vd V = 0 Vdc, 0VdDS GSOutput Capacitance C − 352 480ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C − 90 180rssSWITCHING CHARACTERISTICS (Note 5)Turn−On Delay Time t − 13 30 nsd(on)Rise Time t − 341 680r(V (V = 30 Vdc, I 30 Vdc, I = 45 Adc, 45 Adc,DD DD D DV = 5.0 Vdc, R = 9.1 ) (Note 4)GS GTurn−Off Delay Time t − 36 75d(off)Fall Time t − 158 320fGate Charge Q − 23 32 nCT(V (V = 48 Vdc, I 48 Vd I = 45 Adc, 45 AdDS DQ − 4.6 −1V V = 5.0 Vdc = 5.0 Vdc) ) ( (Note Note 4 4) )GS GSQ − 14.1 −2SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage (I = 45 Adc, V = 0 Vdc) (Note 4) V − 1.01 1.15 VdcS GS SD(I = 45 Adc, V = 0 Vdc, T = 150°C) − 0.92 −S GS JReverse Recovery Time t − 56 − nsrr(I (I = 45 Adc, V 45 Ad V = 0 Vdc, 0VdS GSt − 30 −adI dI /dt /dt = 100 A/ = 100 A/s s) ) ( (Note Note 4 4) )S St − 26 −bReverse Recovery Stored Charge Q − 0.09 − CRR23. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in ).4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.5. Switching characteristics are independent of operating junction temperatures.
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