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PDTA114TE-PDTA114TT-PDTA114TU
PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open
Product profile1.1 General descriptionPNP Resistor-Equipped Transistors (RET) family in small plastic packages.
[1] Also available in SOT54A and SOT54 variant packages (see Section2).
1.2 Features
1.3 Applications
1.4 Quick reference data
PDT A114T series
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
Rev. 07 — 20 April 2007 Product data sheet
Table 1. Product overviewPDTA114TE SOT416 SC-75 - PDTC114TE
PDTA114TK SOT346 SC-59A TO-236 PDTC114TK
PDTA114TM SOT883 SC-101 - PDTC114TM
PDTA114TS[1] SOT54 SC-43A TO-92 PDTC114TS
PDTA114TT SOT23 - TO-236AB PDTC114TT
PDTA114TU SOT323 SC-70 - PDTC114TU 100 mA output current capability n Reduces component count Built-in bias resistors n Reduces pick and place costs Simplifies circuit design Digital applications n Cost-saving alternative to BC857 series
in digital applications Control of IC inputs n Low current peripheral driver
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - −50 V output current - - −100 mA bias resistor 1 (input) 7 10 13 kΩ
NXP Semiconductors PDT A114T series
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open Pinning information
Table 3. Pinning
SOT54 input (base) output (collector) GND (emitter)
SOT54A input (base) output (collector) GND (emitter)
SOT54 variant input (base) output (collector) GND (emitter)
SOT23; SOT323; SOT346; SOT416 input (base) GND (emitter) output (collector)
SOT883 input (base) GND (emitter) output (collector)
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001aab348
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top view
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NXP Semiconductors PDT A114T series
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open Ordering information[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section9).
Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 4. Ordering informationPDTA114TE SC-75 plastic surface-mounted package; 3 leads SOT416
PDTA114TK SC-59A plastic surface-mounted package; 3 leads SOT346
PDTA114TM SC-101 leadless ultra small plastic package;3 solder lands;
body 1.0× 0.6× 0.5 mm
SOT883
PDTA114TS[1] SC-43A plasticsingle-ended leaded (through hole) package; leads
SOT54
PDTA114TT - plastic surface-mounted package; 3 leads SOT23
PDTA114TU SC-70 plastic surface-mounted package; 3 leads SOT323
Table 5. Marking codesPDTA114TE 11
PDTA114TK 23
PDTA114TM DE
PDTA114TS TA114T
PDTA114TT *11
PDTA114TU *23
NXP Semiconductors PDT A114T series
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −50 V
VCEO collector-emitter voltage open base - −50 V
VEBO emitter-base voltage open collector - −5V output current - −100 mA
ICM peak collector current single pulse;≤ 1ms −100 mA
Ptot total power dissipation Tamb≤25°C
PDTA114TE [1]- 150 mW
PDTA114TK [1]- 250 mW
PDTA114TM [2][3]- 250 mW
PDTA114TS [1]- 500 mW
PDTA114TT [1]- 250 mW
PDTA114TU [1]- 200 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air
PDTA114TE [1]- - 833 K/W
PDTA114TK [1]- - 500 K/W
PDTA114TM [2][3]- - 500 K/W
PDTA114TS [1]- - 250 K/W
PDTA114TT [1]- - 500 K/W
PDTA114TU [1]- - 625 K/W
NXP Semiconductors PDT A114T series
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open Characteristics
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB= −50 V; IE =0A - - −100 nA
ICEO collector-emitter
cut-off current
VCE= −30 V; IB =0A - - −1 μA
VCE= −30 V; IB =0A;= 150°C −50 μA
IEBO emitter-base cut-off
current
VEB=−5 V; IC =0A - - −100 nA
hFE DC current gain VCE=−5 V; IC=−1 mA 200 - -
VCEsat collector-emitter
saturation voltage= −10 mA;= −0.5 mA −150 mV bias resistor 1 (input) 7 10 13 kΩ collector capacitance VCB= −10 V;IE =ie =0A;=1 MHz 3 pF
NXP Semiconductors PDT A114T series
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open Package outline
