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PDTA114TT
PNP resistor-equipped transistor
Philips Semiconductors Objective specification
PNP resistor-equipped transistor PDTA114TT
FEATURES Built-in bias resistor R1 (typ.10 kΩ) Simplification of circuit design Reduces number of components
and board space.
APPLICATIONS Especially suitable for space
reduction in interface and driver
circuits Inverter circuit configurations
without use of an external resistor.
DESCRIPTIONPNP resistor-equipped transistor in a
SOT23 plastic package.
NPN complement: PDTC114TT.
PINNING
MARKING
Note∗=p: Made in Hong Kong.=t: Made in Malaysia.
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Transistor mounted on an FR4 printed-circuit board.
Philips Semiconductors Objective specification
PNP resistor-equipped transistor PDTA114TT
THERMAL CHARACTERISTICS
Note Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICSTamb =25 °C unless otherwise specified.
Philips Semiconductors Objective specification
PNP resistor-equipped transistor PDTA114TT
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
Philips Semiconductors Objective specification
PNP resistor-equipped transistor PDTA114TT
DEFINITIONS
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Philips Semiconductors Objective specification
PNP resistor-equipped transistor PDTA114TT
NOTES
