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PDTA123EU
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series
FEATURES Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs.
APPLICATIONS General purpose switching and amplification Inverter and interface circuits Circuit driver.
QUICK REFERENCE DATA
DESCRIPTIONPNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
Note * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series
ORDERING INFORMATION
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Refer to standard mounting conditions. Reflow soldering is the only recommended soldering method. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series
THERMAL CHARACTERISTICS
Notes Refer to standard mounting conditions. Reflow soldering is the only recommended soldering method. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICSTamb = 25 °C unless otherwise specified.
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series
PACKAGE OUTLINES
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123E series
