PDTA123YU ,PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhmGeneral descriptionPNP Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Pac ..
PDTA124EE ,PNP resistor-equipped transistorapplications Control of IC inputs Switching loads1.4 Quick reference data Table 2. Quick referenc ..
PDTA124EK ,PNP resistor-equipped transistor
PDTA124EK ,PNP resistor-equipped transistor
PDTA124ET ,PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionPNP Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) pl ..
PDTA124EU ,PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟Features and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIC12F629 , 8-Pin, Flash-Based 8-Bit CMOS Microcontrollers
PIC12F683 , 8-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology
PIC12F683 , 8-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology
PIC16C505 , 14-Pin, 8-Bit CMOS Microcontroller
PIC16C505 , 14-Pin, 8-Bit CMOS Microcontroller
PIC16C54C , EPROM/ROM-Based 8-Bit CMOS Microcontroller Series
PDTA123YU
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm
Product profile1.1 General descriptionPNP Resistor-Equipped Transistors (RET).
[1] Also available in SOT54A and SOT54 variant packages (see Section2)
1.2 Features
1.3 Applications
1.4 Quick reference data
PDT A123Y series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 04 — 3 September 2009 Product data sheet
Table 1. Product overviewPDTA123YE SOT416 SC-75 - PDTC123YE
PDTA123YK SOT346 SC-59A TO-236 PDTC123YK
PDTA123YM SOT883 SC-101 - PDTC123YM
PDTA123YS[1] SOT54 SC-43A TO-92 PDTC123YS
PDTA123YT SOT23 - TO-236AB PDTC123YT
PDTA123YU SOT323 SC-70 - PDTC123YU Built-in bias resistors n Reduces component count Simplifies circuit design n Reduces pick and place costs General purpose switching and
amplification Circuit drivers Inverter and interface circuits
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - −50 V output current (DC) - - −100 mA bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 3.6 4.5 5.5
NXP Semiconductors PDT A123Y series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Pinning information
Table 3. Pinning
SOT54 input (base) output (collector) GND (emitter)
SOT54A input (base) output (collector) GND (emitter)
SOT54 variant input (base) output (collector) GND (emitter)
SOT23, SOT323, SOT346, SOT416 input (base) GND (emitter) output (collector)
SOT883 input (base) GND (emitter) output (collector)
001aab347
006aaa148
001aab348
006aaa148
001aab447
006aaa148
006aaa144
sym003
Transparent
top view
sym003
NXP Semiconductors PDT A123Y series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Ordering information[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section9)
Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 4. Ordering informationPDTA123YE SC-75 plastic surface mounted package; 3 leads SOT416
PDTA123YK SC-59A plastic surface mounted package; 3 leads SOT346
PDTA123YM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
SOT883
PDTA123YS[1] SC-43A plastic single-ended leaded (through hole) package; leads
SOT54
PDTA123YT - plastic surface mounted package; 3 leads SOT23
PDTA123YU SC-70 plastic surface mounted package; 3 leads SOT323
Table 5. Marking codesPDTA123YE 14
PDTA123YK 13
PDTA123YM G2
PDTA123YS TA123Y
PDTA123YT *AD
PDTA123YU *13
NXP Semiconductors PDT A123Y series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Limiting values[1] Refer to standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 μm copper strip line.
Thermal characteristics[1] Refer to standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 μm copper strip line.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −50 V
VCEO collector-emitter voltage open base - −50 V
VEBO emitter-base voltage open collector - −5V input voltage
positive - +5 V
negative - −12 V output current (DC) - −100 mA
ICM peak collector current - −100 mA
Ptot total power dissipation Tamb ≤ 25°C
SOT416 [1]- 150 mW
SOT346 [1]- 250 mW
SOT883 [2][3]- 250 mW
SOT54 [1]- 500 mW
SOT23 [1]- 250 mW
SOT323 [1]- 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Table 7. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air
SOT416 [1]- - 833 K/W
SOT346 [1]- - 500 K/W
SOT883 [2][3]- - 500 K/W
SOT54 [1]- - 250 K/W
SOT23 [1]- - 500 K/W
SOT323 [1]- - 625 K/W
NXP Semiconductors PDT A123Y series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Characteristics
Table 8. CharacteristicsTamb = 25 °C unless otherwise specified
ICBO collector-base cut-off
current
VCB = −50 V; IE = 0 A - - −100 nA
ICEO collector-emitter
cut-off current
VCE = −30 V; IB = 0 A - - −1 μA
VCE = −30 V; IB = 0 A;= 150°C −50 μA
IEBO emitter-base cut-off
current
VEB = −5 V; IC = 0 A - - −700 μA
hFE DC current gain VCE = −5 V; IC = −5 mA 35 - -
VCEsat collector-emitter
saturation voltage
IC = −10 mA; IB = −0.5 mA - - −150 mV
VI(off) off-state input voltage VCE = −5 V; IC = −100 μA- −0.75 −0.3 V
VI(on) on-state input voltage VCE = −300 mV; IC = −20 mA −2.5 −1.15 - V bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 3.6 4.5 5.5 collector capacitance VCB = −10 V; IE = ie = 0 A;
f=1MHz
--2 pF
NXP Semiconductors PDT A123Y series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
NXP Semiconductors PDT A123Y series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Package outline
Fig 5. Package outline SOT416 (SC-75)
Plastic surface-mounted package; 3 leads SOT416
NXP Semiconductors PDT A123Y series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Fig 6. Package outline SOT346 (SC-59A/TO-236)
Plastic surface-mounted package; 3 leads SOT346
NXP Semiconductors PDT A123Y series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883
