PDTA124EU ,PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟Features and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PDTA124TEF ,PDTA124T series; PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = openFEATURES QUICK REFERENCE DATA• Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT• Simplified c ..
PDTA124TK ,PDTA124T series; PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = openDISCRETE SEMICONDUCTORSDATA SHEETPDTA124T seriesPNP resistor-equipped transistors;R1 = 22 kΩ, R2 = ..
PDTA124TU ,PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = openDISCRETE SEMICONDUCTORSDATA SHEETPDTA124T seriesPNP resistor-equipped transistors;R1 = 22 kΩ, R2 = ..
PDTA124XE ,PNP resistor-equipped transistorPDTA124X seriesPNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩRev. 08 — 3 September 2009 ..
PDTA124XEF ,PNP resistor-equipped transistor
PIC12F629 , 8-Pin, Flash-Based 8-Bit CMOS Microcontrollers
PIC12F683 , 8-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology
PIC12F683 , 8-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology
PIC16C505 , 14-Pin, 8-Bit CMOS Microcontroller
PIC16C505 , 14-Pin, 8-Bit CMOS Microcontroller
PIC16C54C , EPROM/ROM-Based 8-Bit CMOS Microcontroller Series
PDTA124EE-PDTA124ET-PDTA124EU
PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟
1. Product profile
1.1 General descriptionPNP Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic
packages.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PDTA124E series
PNP resistor-equipped transistors;
R1 = 22 k, R2 = 22 k
Rev. 8 — 25 November 2011 Product data sheet
Table 1. Product overviewPDTA124EE SOT416 SC-75 - PDTC124EE ultra small
PDTA124EM SOT883 SC-101 - PDTC124EM leadless ultra small
PDTA124ET SOT23 - TO-236AB PDTC124ET small
PDTA124EU SOT323 SC-70 - PDTC124EU very small 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design AEC-Q101 qualified Digital applications in automotive and
industrial segments Cost-saving alternative for BC847/857
series in digital applications Control of IC inputs Switching loads
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - 50 V output current - - 100 mA bias resistor 1 (input) 15.4 22 28.6 k
R2/R1 bias resistor ratio 0.8 1 1.2
NXP Semiconductors PDT A124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k
2. Pinning information
3. Ordering information
4. Marking[1] * = placeholder for manufacturing site code
Table 3. Pinning
SOT23; SOT323; SOT416
SOT883
Table 4. Ordering informationPDTA124EE SC-75 plastic surface-mounted package; 3 leads SOT416
PDTA124EM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 0.6 0.5 mm
SOT883
PDTA124ET - plastic surface-mounted package; 3 leads SOT23
PDTA124EU SC-70 plastic surface-mounted package; 3 leads SOT323
Table 5. Marking codesPDTA124EE 05
PDTA124EM DH
PDTA124ET *05
PDTA124EU *05
NXP Semiconductors PDT A124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k
5. Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V input voltage
positive - +10 V
negative - 40 V output current - 100 mA
ICM peak collector current single pulse; 1ms 100 mA
Ptot total power dissipation Tamb25C
PDTA124EE (SOT416) [1][2] -150 mW
PDTA124EM (SOT883) [2][3] -250 mW
PDTA124ET (SOT23) [1] -250 mW
PDTA124EU (SOT323) [1] -200 mW junction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors PDT A124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k
6. Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
Table 7. Thermal characteristicsRth(j-a) thermal resistance from junction
to ambient
in free air
PDTA124EE (SOT416) [1][2] -- 830 K/W
PDTA124EM (SOT883) [2][3] -- 500 K/W
PDTA124ET (SOT23) [1] -- 500 K/W
PDTA124EU (SOT323) [1] -- 625 K/W
NXP Semiconductors PDT A124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 kNXP Semiconductors PDT A124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k
NXP Semiconductors PDT A124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k
7. Characteristics[1] Characteristics of built-in transistor
Table 8. CharacteristicsTamb =25 C unless otherwise specified.
ICBO collector-base cut-off
current
VCB= 50 V; IE =0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE= 30 V; IB =0A - - 100 nA
VCE= 30 V; IB =0A; = 150C 5 A
IEBO emitter-base cut-off
current
VEB= 5V; IC =0A - - 180 A
hFE DC current gain VCE= 5V; IC= 5mA 60 - -
VCEsat collector-emitter
saturation voltage= 10 mA; IB= 0.5 mA - - 150 mV
VI(off) off-state input voltage VCE= 5V; IC= 100 A- 1.1 0.8 V
VI(on) on-state input voltage VCE= 0.3 V; IC= 5mA 2.5 1.7 - V bias resistor 1 (input) 15.4 22 28.6 k
R2/R1 bias resistor ratio 0.8 1 1.2 collector capacitance VCB= 10 V; IE =ie =0A; 1MHz 3 pF transition frequency VCE= 5V; IC= 10 mA; = 100 MHz
[1] -180 -MHz
NXP Semiconductors PDT A124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k
