PDTA144VK ,PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhmGeneral descriptionPNP resistor-equipped transistors.Table 1: Product overviewType number Package N ..
PDTA144VK ,PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhmPDTA144V seriesPNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩRev. 03 — 22 February 2005 ..
PDTA144VT ,PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhmPDTA144V seriesPNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩRev. 04 — 3 September 2009 ..
PDTA144VU ,PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhmGeneral descriptionPNP resistor-equipped transistors.Table 1: Product overviewType number Package N ..
PDTA144VU ,PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhmFeaturesn Built-in bias resistors n Reduces component countn Simplifies circuit design n Reduces pic ..
PDTA144WE ,PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhmFEATURES QUICK REFERENCE DATA• Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT• Simplified c ..
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PDTA144VK
PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm
Product profile1.1 General descriptionPNP resistor-equipped transistors.
[1] Also available in SOT54A and SOT54 variant packages (see Section2).
1.2 Features
1.3 Applications
1.4 Quick reference data
PDT A144V series
PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ
Table 1: Product overviewPDTA144VE SOT416 SC-75 PDTC144VE
PDTA144VK SOT346 SC-59A PDTC144VK
PDTA144VM SOT883 SC-101 PDTC144VM
PDTA144VS[1] SOT54 SC-43A PDTC144VS
PDTA144VT SOT23 - PDTC144VT
PDTA144VU SOT323 SC-70 PDTC144VU Built-in bias resistors � Reduces component count Simplifies circuit design � Reduces pick and place costs General purpose switching and
amplification Circuit drivers Inverter and interface circuits
Table 2: Quick reference dataVCEO collector-emitter voltage open base - - −50 V output current (DC) - - −100 mA bias resistor 1 (input) 33 47 61 kΩ
R2/R1 bias resistor ratio 0.17 0.21 0.26
Philips Semiconductors PDT A144V series Pinning information
Table 3: Pinning
SOT54 input (base) output (collector) GND (emitter)
SOT54A input (base) output (collector) GND (emitter)
SOT54 variant input (base) output (collector) GND (emitter)
SOT23, SOT323, SOT346, SOT416 input (base) GND (emitter) output (collector)
SOT883 input (base) GND (emitter) output (collector)
001aab347
006aaa148
001aab348
006aaa148
001aab447
006aaa148
006aaa144
sym003
Transparent
top view
sym003
Philips Semiconductors PDT A144V series Ordering information[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section9).
Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 4: Ordering informationPDTA144VE SC-75 plastic surface mounted package; 3 leads SOT416
PDTA144VK SC-59A plastic surface mounted package; 3 leads SOT346
PDTA144VM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
SOT883
PDTA144VS[1] SC-43A plastic single-ended leaded (through hole) package; leads
SOT54
PDTA144VT - plastic surface mounted package; 3 leads SOT23
PDTA144VU SC-70 plastic surface mounted package; 3 leads SOT323
Table 5: Marking codesPDTA144VE 13
PDTA144VK 12
PDTA144VM E9
PDTA144VS TA144V
PDTA144VT *AG
PDTA144VU *12
Philips Semiconductors PDT A144V series Limiting values[1] Refer to standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 μm copper strip line.
Thermal characteristics[1] Refer to standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 μm copper strip line.
Table 6: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −50 V
VCEO collector-emitter voltage open base - −50 V
VEBO emitter-base voltage open collector - −15 V input voltage
positive - +15 V
negative - −40 V output current (DC) - −100 mA
ICM peak collector current - −100 mA
Ptot total power dissipation Tamb ≤ 25°C
SOT416 [1]- 150 mW
SOT346 [1]- 250 mW
SOT883 [2][3]- 250 mW
SOT54 [1]- 500 mW
SOT23 [1]- 250 mW
SOT323 [1]- 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Table 7: Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air
SOT416 [1]- - 833 K/W
SOT346 [1]- - 500 K/W
SOT883 [2][3]- - 500 K/W
SOT54 [1]- - 250 K/W
SOT23 [1]- - 500 K/W
SOT323 [1]- - 625 K/W
Philips Semiconductors PDT A144V series Characteristics
Table 8: CharacteristicsTamb = 25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB = −50 V; IE = 0 A - - −100 nA
ICEO collector-emitter
cut-off current
VCE = −30 V; IB = 0 A - - −1 μA
VCE = −30 V; IB = 0 A;= 150°C −50 μA
IEBO emitter-base cut-off
current
VEB = −5 V; IC = 0 A - - −150 μA
hFE DC current gain VCE = −5 V; IC = −5 mA 40 - -
VCEsat collector-emitter
saturation voltage
IC = −10 mA; IB = −0.5 mA - - −150 mV
VI(off) off-state input voltage VCE = −5 V; IC = −100 μA- −3.1 −1V
VI(on) on-state input voltage VCE = −300 mV; IC = −2mA −6 −3.8 - V bias resistor 1 (input) 33 47 61 kΩ
R2/R1 bias resistor ratio 0.17 0.21 0.26 collector capacitance VCB = −10 V; IE = ie = 0 A;
f=1MHz
--2 pF
Philips Semiconductors PDT A144V series
Philips Semiconductors PDT A144V series Package outline
Fig 5. Package outline SOT416 (SC-75)
Plastic surface mounted package; 3 leads SOT416
Philips Semiconductors PDT A144V series
Fig 6. Package outline SOT346 (SC-59A/TO-236)
Plastic surface mounted package; 3 leads SOT346
Philips Semiconductors PDT A144V series
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883
