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Partno	Mfg	Dc	Qty	Available	Descript
PDTB113ET	PHILIPS	N/a	3000	avai	PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 1 kOhm

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PDTB113ET
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 1 kOhm
1. Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTD113ET.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PDTB1 13ET
PNP 500 mA, 50 V resistor-equipped transistor;
R1 = 1 kΩ, R2 = 1 kΩ
Rev. 3 — 14 September 2010 Product data sheet 500 mA output current capability Reduces pick and place costs Built-in bias resistors ±10 % resistor ratio tolerance Simplifies circuit design AEC-Q101 qualified Reduces component count Digital application in automotive and
industrial segments Cost-saving alternative for BC807 series
in digital applications Control of IC inputs Switching loads
Table 1. Quick reference data
VCEO collector-emitter voltage open base - - −50 V output current - - −500 mA bias resistor1 (input) 0.7 1.0 1.3 kΩ
R2/R1 bias resistor ratio 0.9 1.0 1.1
NXP Semiconductors PDTB113ET
PNP 500 mA, resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 2. Pinning input (base) GND (emitter) output (collector)
sym003
Table 3. Ordering information
PDTB113ET - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
PDTB113ET *7U
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −50 V
VCEO collector-emitter voltage open base - −50 V
VEBO emitter-base voltage open collector - −10 V input voltage
positive - +10 V
negative - −10 V output current - −500 mA
NXP Semiconductors PDTB113ET
PNP 500 mA, resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Ptot total power dissipation Tamb≤25°C [1] -250 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 6. Thermal characteristics
Rth(j-a) thermal resistance from
junction to ambient
in free air [1] -- 500 K/W
Table 7. Characteristics
Tamb =25 °C unless otherwise specified.
ICBO collector-base
cut-off current
VCB= −40 V; IE =0A - - −100 nA
VCB= −50 V; IE =0A - - −100 nA
ICEO collector-emitter
cut-off current
VCE= −50 V; IB =0A - - −0.5 μA
IEBO emitter-base
cut-off current
VEB= −5V; IC =0A - - −4.0 mA
hFE DC current gain VCE= −5V; = −50 mA - -
VCEsat collector-emitter
saturation voltage= −50 mA; = −2.5 mA −0.3 V
VI(off) off-state input voltage VCE= −5V; = −100μA −0.6 −1.1 −1.5 V
VI(on) on-state input voltage VCE= −0.3V; = −20 mA −1.0 −1.4 −1.8 V bias resistor1 (input) 0.7 1.0 1.3 kΩ
R2/R1 bias resistor ratio 0.9 1.0 1.1 collector capacitance VCB= −10V; =ie =0A;
f=100MHz
-11 - pF
NXP Semiconductors PDTB113ET
PNP 500 mA, resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ
NXP Semiconductors PDTB113ET
PNP 500 mA, resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section14.
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
PDTB113ET SOT23 4 mm pitch, 8 mm tape and reel -215 -235
NXP Semiconductors PDTB113ET
PNP 500 mA, resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ
11. Soldering

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