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PDTC114EUPHILIPSN/a155569avaiNPN resistor-equipped transistor


PDTC114EU ,NPN resistor-equipped transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
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PDTC114EU
NPN resistor-equipped transistor

Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114EU
FEATURES
Built-in bias resistors R1 and R2
(typ.10 kΩ each) Simplification of circuit design Reduces number of components
and board space.
APPLICATIONS
Especially suitable for space
reduction in interface and driver
circuits Inverter circuit configurations
without use of external resistors.
DESCRIPTION

NPN resistor-equipped transistor in a
SOT323 plastic package.
PNP complement: PDTA114EU.
PINNING
MARKING
Note
∗=-: Made in Hong Kong.=t: Made in Malaysia.
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114EU
LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
Note
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS

Tamb =25 °C unless otherwise specified.
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114EU
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114EU
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT323
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114EU
DEFINITIONS
LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
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