PDTC114TE ,NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = openPDTC114T seriesNPN resistor-equipped transistors; R1 = 10 kΩ, R2 = openRev. 08 — 9 February 2006 Pr ..
PDTC114TE ,NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = openFeatures■ Built-in bias resistors ■ Reduces component count■ Simplifies circuit design ■ Reduces pic ..
PDTC114TT ,NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open
PDTC114TT ,NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = openGeneral descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1: Product overviewType num ..
PDTC114TT ,NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open
PDTC114TU ,NPN resistor-equipped transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
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PDTC114TE-PDTC114TT
NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open
Product profile1.1 General descriptionNPN Resistor-Equipped T ransistors (RET) family.
[1] Also available in SOT54A and SOT54 variant packages (see Section2).
1.2 Features
1.3 Applications
1.4 Quick reference data
PDTC114T series
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open
Table 1: Product overviewPDTC114TE SOT416 SC-75 - PDTA114TE
PDTC114TK SOT346 SC-59A TO-236 PDTA114TK
PDTC114TM SOT883 SC-101 - PDTA114TM
PDTC114TS[1] SOT54 SC-43A TO-92 PDTA114TS
PDTC114TT SOT23 - TO-236AB PDTA114TT
PDTC114TU SOT323 SC-70 - PDTA114TU Built-in bias resistors � Reduces component count Simplifies circuit design � Reduces pick and place costs 100 mA output current capability Digital applications � Cost-saving alternativefor BC847 series
in digital applications Controlling IC inputs � Switching loads
Table 2: Quick reference dataVCEO collector-emitter voltage open base - - 50 V output current - - 100 mA bias resistor 1 (input) 7 10 13 kΩ
Philips Semiconductors PDTC114T series Pinning information
Table 3: Pinning
SOT54 input (base) output (collector) GND (emitter)
SOT54A input (base) output (collector) GND (emitter)
SOT54 variant input (base) output (collector) GND (emitter)
SOT23; SOT323; SOT346; SOT416 input (base) GND (emitter) output (collector)
SOT883 input (base) GND (emitter) output (collector)
001aab347
006aaa218
001aab348
006aaa218
001aab447
006aaa218
006aaa144
sym012
Transparent
top view
sym012
Philips Semiconductors PDTC114T series Ordering information[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section9).
Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 4: Ordering informationPDTC114TE SC-75 plastic surface mounted package; 3 leads SOT416
PDTC114TK SC-59A plastic surface mounted package; 3 leads SOT346
PDTC114TM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0× 0.6× 0.5 mm
SOT883
PDTC114TS[1] SC-43A plastic single-ended leaded (through hole) package; leads
SOT54
PDTC114TT - plastic surface mounted package; 3 leads SOT23
PDTC114TU SC-70 plastic surface mounted package; 3 leads SOT323
Table 5: Marking codesPDTC114TE 24
PDTC114TK 24
PDTC114TM DT
PDTC114TS TC114T
PDTC114TT *12
PDTC114TU *24
Philips Semiconductors PDTC114T series Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
Table 6: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 5 V output current - 100 mA
ICM peak collector current single pulse;≤ 1ms 100 mA
Ptot total power dissipation Tamb≤25°C
SOT416 [1]- 150 mW
SOT346 [1]- 250 mW
SOT883 [2][3]- 250 mW
SOT54 [1]- 500 mW
SOT23 [1]- 250 mW
SOT323 [1]- 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Table 7: Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air
SOT416 [1]- - 833 K/W
SOT346 [1]- - 500 K/W
SOT883 [2][3]- - 500 K/W
SOT54 [1]- - 250 K/W
SOT23 [1]- - 500 K/W
SOT323 [1]- - 625 K/W
Philips Semiconductors PDTC114T series Characteristics
Table 8: CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE =30V; IB =0A - - 1 μA
VCE =30V; IB =0A;= 150°C 50 μA
IEBO emitter-base cut-off
current
VEB =5V; IC=0A - - 100 nA
hFE DC current gain VCE =5V; IC=1 mA 200 - -
VCEsat collector-emitter
saturation voltage=10 mA; IB= 0.5 mA - - 150 mV bias resistor 1 (input) 7 10 13 kΩ collector capacitance VCB =10V; IE =ie =0A;
f=1MHz - 2.5 pF
Philips Semiconductors PDTC114T series Package outline
