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PDTD123YT
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm
Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.
[1] Also available in SOT54A and SOT54 variant packages (see Section2).
1.2 Features
1.3 Applications
1.4 Quick reference data
PDTD123Y series
NPN 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 02 — 16 November 2009 Product data sheet
Table 1. Product overviewPDTD123YK SOT346 SC-59A TO-236 PDTB123YK
PDTD123YS[1] SOT54 SC-43A TO-92 PDTB123YS
PDTD123YT SOT23 - TO-236AB PDTB123YT Built-in bias resistors Reduces component count Simplifies circuit design Reduces pick and place costs 500 mA output current capability ±10 % resistor ratio tolerance Digital application in automotive and
industrial segment Cost saving alternative for BC817 series
in digital applications Controlling IC inputs Switching loads
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - 50 V output current (DC) - - 500 mA bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 4.1 4.55 5
NXP Semiconductors PDTD123Y series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Pinning information Table 3. Pinning
SOT54 input (base) output (collector) GND (emitter)
SOT54A input (base) output (collector) GND (emitter)
SOT54 variant input (base) output (collector) GND (emitter)
SOT23, SOT346 input (base) GND (emitter) output (collector)
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NXP Semiconductors PDTD123Y series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Ordering information[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section9).
Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Limiting values
Table 4. Ordering informationPDTD123YK SC-59A plastic surface mounted package; 3 leads SOT346
PDTD123YS[1] SC-43A plastic single-ended leaded (through hole) package; leads
SOT54
PDTD123YT - plastic surface mounted package; 3 leads SOT23
Table 5. Marking codesPDTD123YK E7
PDTD123YS D123YS
PDTD123YT *7X
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 5 V input voltage
positive - +12 V
negative - −5V output current (DC) - 500 mA
Ptot total power dissipation Tamb≤25°C [1]
SOT346 - 250 mW
SOT54 - 500 mW
SOT23 - 250 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
NXP Semiconductors PDTD123Y series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Characteristics
Table 7. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1]
SOT346 - - 500 K/W
SOT54 - - 250 K/W
SOT23 - - 500 K/W
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB =40V; IE=0A - - 100 nA
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE =50V; IB =0A - - 0.5 μA
IEBO emitter-base cut-off
current
VEB =5V; IC =0A - - 0.65 mA
hFE DC current gain VCE =5V; IC =50mA 70 - -
VCEsat collector-emitter
saturation voltage =50mA; IB =2.5 mA - - 0.3 V
VI(off) off-state input voltage VCE =5V; IC =100 μA0.4 0.6 1 V
VI(on) on-state input voltage VCE =0.3 V; IC =20mA 0.5 1 1.4 V bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 4.1 4.55 5 collector capacitance VCB =10V; IE =ie =0A; 1MHz - pF
NXP Semiconductors PDTD123Y series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
NXP Semiconductors PDTD123Y series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Package outline
