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PMEG2005ETNXPN/a3000avai0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package
PMEG3005ETNXPN/a1564avai0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package


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PMEG2005ET-PMEG3005ET
0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package
Product profile1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOT23 small Surface
Mounted Device (SMD) plastic package.
1.2 Features
Forward current: 0.5A Very low forward voltage Small SMD plastic package
1.3 Applications
Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Inverse polarity protection Low power consumption applications
PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in
SOT23 package
Rev. 02 — 13 January 2010 Product data sheet
Table 1. Product overview

PMEG2005ET SOT23 - single diode
PMEG3005ET SOT23 - single diode
PMEG4005ET SOT23 - single diode
NXP Semiconductors PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package
1.4 Quick reference data

[1] Pulse test: tp≤ 300 μs; δ≤ 0.02. Pinning information Ordering information
Table 2. Quick reference data
forward current - - 0.5 A reverse voltage
PMEG2005ET - - 20 V
PMEG3005ET - - 30 V
PMEG4005ET - - 40 V forward voltage IF= 500 mA [1]
PMEG2005ET - 355 390 mV
PMEG3005ET - 380 430 mV
PMEG4005ET - 420 470 mV
Table 3. Pinning
anode not connected cathode
mlc357
n.c.1
Table 4. Ordering information

PMEG2005ET - plastic surface mounted package; 3 leads SOT23
PMEG3005ET - plastic surface mounted package; 3 leads SOT23
PMEG4005ET - plastic surface mounted package; 3 leads SOT23
NXP Semiconductors PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package Marking

[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Thermal characteristics
[1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 5. Marking codes

PMEG2005ET P3*
PMEG3005ET P4*
PMEG4005ET P5*
Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage
PMEG2005ET - 20 V
PMEG3005ET - 30 V
PMEG4005ET - 40 V forward current - 0.5 A
IFRM repetitive peak forward current tp≤1 ms; δ≤ 0.5 - 3.9 A
IFSM non-repetitive peak forward
current=8 ms square
wave
[1] -10 A
Ptot total power dissipation Tamb≤25°C [1]- 280 mW
[2]- 420 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristics

Rth(j-a) thermal resistance from
junction to ambient
in free air [1][2] -- 440 K/W
[1][3] -- 300 K/W
NXP Semiconductors PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package Characteristics

[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
Table 8. Characteristics

Tamb =25 °C unless otherwise specified. forward voltage [1]
PMEG2005ET IF= 0.1 mA - 90 130 mV=1 mA - 150 190 mV=10 mA - 210 240 mV= 100 mA - 280 330 mV= 500 mA - 355 390 mV
PMEG3005ET IF= 0.1 mA - 90 130 mV=1 mA - 150 200 mV=10 mA - 215 250 mV= 100 mA - 285 340 mV= 500 mA - 380 430 mV
PMEG4005ET IF= 0.1 mA - 95 130 mV=1 mA - 155 210 mV=10 mA - 220 270 mV= 100 mA - 295 350 mV= 500 mA - 420 470 mV reverse current
PMEG2005ET VR =10V - 15 40 μA=20V - 40 200 μA
PMEG3005ET VR =10V - 12 30 μA=30V - 40 150 μA
PMEG4005ET VR =10V - 7 20 μA=40V - 30 100 μA diode capacitance VR =1V; f= 1MHz
PMEG2005ET - 66 80 pF
PMEG3005ET - 55 70 pF
PMEG4005ET - 43 50 pF
NXP Semiconductors PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package

NXP Semiconductors PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package

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