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PMEG2010AEB
20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package
NXP Semiconductors Product data sheet
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package PMEG2010AEB
FEATURES Forward current: 1.0 A Reverse voltage: 20 V Ultra low forward voltage Ultra small SMD package.
APPLICATIONS Low voltage rectification High efficiency DC/DC conversion Voltage clamping Inverse-polarity protection Low power consumption applications.
DESCRIPTIONPlanar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a SOD523 (SC-79) ultra
small plastic SMD package.
ORDERING INFORMATION
RELATED PRODUCTS
NXP Semiconductors Product data sheet
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package PMEG2010AEB
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
THERMAL CHARACTERISTICS
Notes Refer to SOD523 (SC-79) standard mounting conditions. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request. Solder point of cathode tab.
NXP Semiconductors Product data sheet
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package PMEG2010AEB
CHARACTERISTICSTamb = 25 °C unless otherwise specified.
Note Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
NXP Semiconductors Product data sheet
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package PMEG2010AEB
Product data sheet PMEG2010AEB
