PMEG2010AEH ,20 V, 1 A very low Vf MEGA Schottky barrier rectifier in SOD123F packageapplications1.4 Quick reference dataTable 2. Quick reference dataSymbol Parameter Conditions Min Ty ..
PMEG2010AEK , 1 A very low VF MEGA Schottky barrier rectifier
PMEG2010AET ,1 A very low VF MEGA Schottky barrier rectifiersLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PMEG2010BEA ,PMEGXX10BEA; PMEGXX10BEV; 1 A very low Vf MEGA Schottky barrier rectifier in ultra small SOT666 and in very small SOD323 (SC-76) ...applications.DESCRIPTIONPlanar Maximum Efficiency General Application (MEGA)1 2Schottky barrier rec ..
PMEG2010BEA ,PMEGXX10BEA; PMEGXX10BEV; 1 A very low Vf MEGA Schottky barrier rectifier in ultra small SOT666 and in very small SOD323 (SC-76) ...FEATURES QUICK REFERENCE DATA• Forward current: 1 ASYMBOL PARAMETER MAX. UNIT• Reverse voltages: 20 ..
PMEG2010BER ,1 A low Vf MEGA Schottky barrier rectifierLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PST9016 , IC for System Reset Monolithic IC
PST9119 , System Reset
PST9121 , System Reset
PST9123 , System Reset
PST9123 , System Reset
PST9127 , System Reset
PMEG2010AEH-PMEG2010AET
1 A very low VF MEGA Schottky barrier rectifiers
Product profile1.1 General descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers withan
integrated guard ringfor stress protection, encapsulatedin small Surface-Mounted Device
(SMD) plastic packages.
1.2 Features Forward current: IF≤ 1A Reverse voltage: VR≤20V Very low forward voltage Small SMD plastic packages
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications
1.4 Quick reference data[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
PMEG2010AEH; PMEG2010AET
1 A very low VF MEGA Schottky barrier rectifiers
Rev. 03 — 28 March 2007 Product data sheet
Table 1. Product overviewPMEG2010AEH SOD123F - single
PMEG2010AET SOT23 - single
Table 2. Quick reference data forward current Tsp≤55°C --1 A reverse voltage - - 20 V forward voltage IF =1A [1]- 380 430 mV
NXP Semiconductors PMEG2010AEH; PMEG2010AET
1 A very low VF MEGA Schottky barrier rectifiers Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning
SOD123F cathode [1] anode
SOT23 anode not connected cathode
sym001
006aaa436
Table 4. Ordering informationPMEG2010AEH - plastic surface-mounted package; 2 leads SOD123F
PMEG2010AET - plastic surface-mounted package; 3 leads SOT23
Table 5. Marking codesPMEG2010AEH AF
PMEG2010AET *AX
NXP Semiconductors PMEG2010AEH; PMEG2010AET
1 A very low VF MEGA Schottky barrier rectifiers Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Thermal characteristics[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Soldering point of cathode tab.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage - 20 V forward current Tsp≤55 °C- 1 A
IFRM repetitive peak forward current tp≤1 ms; 0.25
PMEG2010AEH - 7 A
PMEG2010AET - 6 A
IFSM non-repetitive peak forward
current
square wave; =8ms A
Ptot total power dissipation Tamb≤25°C
PMEG2010AEH [1]- 375 mW
[2]- 830 mW
PMEG2010AET [1]- 280 mW
[2]- 420 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1]
PMEG2010AEH [2]- - 330 K/W
[3]- - 150 K/W
PMEG2010AET [2]- - 440 K/W
[3]- - 300 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[4]
PMEG2010AEH - - 60 K/W
PMEG2010AET - - 120 K/W
NXP Semiconductors PMEG2010AEH; PMEG2010AET
1 A very low VF MEGA Schottky barrier rectifiers Characteristics[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 8. CharacteristicsTamb =25 °C unless otherwise specified. forward voltage [1]=10 mA - 200 220 mV= 100 mA - 265 290 mV=1A - 380 430 mV reverse current VR =5V - 15 50 μA =10V - 20 80 μA =20V - 50 200 μA diode capacitance VR =5V; f=1MHz - 55 70 pF
NXP Semiconductors PMEG2010AEH; PMEG2010AET
1 A very low VF MEGA Schottky barrier rectifiers
NXP Semiconductors PMEG2010AEH; PMEG2010AET
1 A very low VF MEGA Schottky barrier rectifiers Test information Package outline
10. Packing information[1] For further information and the availability of packing methods, see Section14.
Table 9. Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]
PMEG2010AEH SOD123F 4 mm pitch, 8 mm tape and reel -115 -135
PMEG2010AET SOT23 4 mm pitch, 8 mm tape and reel -215 -235
