PMEG3010EB ,1 A very low VF MEGA Schottky barrier rectifierapplications Switch mode power supply1.4 Quick reference data Table 1. Quick reference dataSymbol ..
PMEG3010EH ,1 A very low VF MEGA Schottky barrier rectifiersApplicationsn Low voltage rectificationn High efficiency DC-to-DC conversionn Switch mode power suppl ..
PMEG3010EJ ,1 A very low VF MEGA Schottky barrier rectifiersapplications1.4 Quick reference dataTable 2. Quick reference dataSymbol Parameter Conditions Min Ty ..
PMEG3010EP ,1 A low VF MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise specified ..
PMEG3010ER ,1 A low VF MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise specified ..
PMEG3010ET ,1 A very low VF MEGA Schottky barrier rectifiersGeneral descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers w ..
PST9127 , System Reset
PST9129 , System Reset
PST9129 , System Reset
PST9130 , System Reset
PST9131 , System Reset
PST9140 , System Reset
PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier
Product profile1.1 General descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD523 ultra small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits Forward current: IF ≤ 1 A Reverse voltage: VR ≤ 30 V Very low forward voltage AEC-Q101 qualified Ultra small and flat lead SMD plastic
package
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications
1.4 Quick reference data Pinning information[1] The marking bar indicates the cathode.
PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier
Rev. 2 — 15 March 2012 Product data sheet
Table 1. Quick reference data forward current Tsp≤55°C --1 A reverse voltage - - 30 V forward voltage IF=1 A; pulsed; tp≤ 300 µs; δ≤ 0.02;
Tamb =25°C 610 680 mV
Table 2. Pinning information
NXP Semiconductors PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier Ordering information Marking Limiting values[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Thermal characteristics[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a
significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Soldering point of cathode tab.
Table 3. Ordering informationPMEG3010EB - plastic surface-mounted package; 2 leads SOD523
Table 4. Marking codesPMEG3010EB KA
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage - 30 V forward current Tsp≤55°C - 1 A
IFRM repetitive peak forward current tp≤1 ms; δ≤ 0.25 - 3 A
IFSM non-repetitive peak forward
current =8ms; Tj(init)=25 °C; square wave - 5 A
Ptot total power dissipation Tamb≤25°C [1] - 310 mW junction temperature - 150 °C
Tamb ambient temperature -65 150 °C
Tstg storage temperature -65 150 °C
Table 6. Thermal characteristicsRth(j-a) thermal resistance
from junction to
ambient
in free air [1][2] - - 400 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
[3] --75 K/W
NXP Semiconductors PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier Characteristics
Table 7. Characteristics forward voltage IF= 0.1 mA; pulsed; tp≤ 300 µs; 0.02 ; Tamb =25°C 90 180 mV=1 mA; pulsed; tp≤ 300 µs; 0.02 ; Tamb =25°C 150 200 mV=10 mA; pulsed; tp≤ 300 µs; 0.02 ; Tamb =25°C 210 270 mV= 100 mA; pulsed; tp≤ 300 µs; 0.02 ; Tamb =25°C 295 360 mV= 500 mA; pulsed; tp≤ 300 µs; 0.02 ; Tamb =25°C 430 500 mV=1 A; pulsed; tp≤ 300 µs; δ≤ 0.02;
Tamb =25°C 610 680 mV reverse current VR =10V; Tamb=25°C - 15 200 µA =30V; Tamb=25°C - 70 500 µA diode capacitance VR=1 V; f=1 MHz; Tamb=25°C - 24 30 pF
NXP Semiconductors PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier Test information
8.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
NXP Semiconductors PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier Package outline
10. Soldering
NXP Semiconductors PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier
11. Revision historyTable 8. Revision historyPMEG3010EB v.2 20120315 Product data sheet - PMEG3010EB v.1
Modifications:
• 1 “Product profile” updated
5 “Limiting values”:IFRM and IFSM values corrected
8 “Test information” updated
PMEG3010EB v.1 20061201 Product data sheet - -
