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PMEG6030EP
3 A low V_F MEGA Schottky barrier rectifier
Product profile1.1 General descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features Average forward current: IF(AV) ≤ 3 A Reverse voltage: VR ≤ 60 V Low forward voltage High power capability due to clip-bond technology AEC-Q101 qualified Small and flat lead SMD plastic package
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications
1.4 Quick reference data[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
PMEG6030EP
3 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 21 January 2010 Product data sheet
Table 1. Quick reference data Tj = 25 °C unless otherwise specified.
IF(AV) average forward current square wave; δ = 0.5;
f = 20 kHz
Tamb ≤ 50 °C [1]- - 3 A
Tsp ≤ 135 °C - - 3 A reverse voltage - - 60 V forward voltage IF = 3 A - 460 530 mV reverse current VR = 60 V - 80 200 μA
NXP Semiconductors PMEG6030EP
3 A low VF MEGA Schottky barrier rectifier Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking Limiting values
Table 2. Pinning cathode [1] anode 12
Table 3. Ordering information PMEG6030EP - plastic surface-mounted package; 2 leads SOD128
Table 4. Marking codes PMEG6030EP AB
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage Tj = 25 °C - 60 V
IF(AV) average forward current square wave; δ = 0.5;
f = 20 kHz
Tamb ≤ 50 °C [1]- 3 A
Tsp ≤ 135 °C - 3 A
IFSM non-repetitive peak
forward current
square wave;
tp = 8 ms
[2]- 50 A
Ptot total power dissipation Tamb ≤ 25 °C [3][4]- 625 mW
[3][5]- 1050 mW
[3][1]- 2100 mW
NXP Semiconductors PMEG6030EP
3 A low VF MEGA Schottky barrier rectifier[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Tj = 25 °C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Thermal characteristics[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab. junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
Table 6. Thermal characteristics Rth(j-a) thermal resistance from
junction to ambient
in free air [1][2]
[3]- - 200 K/W
[4]- - 120 K/W
[5]- - 60 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[6]- - 12 K/W
NXP Semiconductors PMEG6030EP
3 A low VF MEGA Schottky barrier rectifierNXP Semiconductors PMEG6030EP
3 A low VF MEGA Schottky barrier rectifier Characteristics
Table 7. Characteristics Tj = 25 °C unless otherwise specified. forward voltage IF = 0.1 A - 290 330 mV
IF = 0.5 A - 340 400 mV
IF = 1 A - 380 440 mV
IF = 1.5 A - 400 470 mV
IF = 2 A - 430 500 mV
IF = 3 A - 460 530 mV reverse current VR = 5 V - 4 - μA
VR = 10 V - 5 - μA
VR = 60 V - 80 200 μA diode capacitance f = 1 MHz
VR = 1 V - 360 - pF
VR = 10 V - 120 - pF
NXP Semiconductors PMEG6030EP
3 A low VF MEGA Schottky barrier rectifierNXP Semiconductors PMEG6030EP
3 A low VF MEGA Schottky barrier rectifier
