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PMF77XN
30 V, single N-channel Trench MOSFET
Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology
1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Pinning information
PMF77XN
30 V, single N-channel Trench MOSFET
Rev. 1 — 27 March 2012 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj=25°C --30 V
VGS gate-source voltage -12 - 12 V drain current VGS =4.5 V; Tamb =25°C; t ≤ 5 s [1] --1.63 A
Static characteristicsRDSon drain-source on-state
resistance
VGS =4.5 V; ID= 1.5 A; Tj=25°C - 77 97 mΩ
Table 2. Pinning information
NXP Semiconductors PMF77XN
30 V, single N-channel Trench MOSFET Ordering information Marking[1] % = placeholder for manufacturing site code
Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 3. Ordering informationPMF77XN SC-70 plastic surface-mounted package; 3 leads SOT323
Table 4. Marking codesPMF77XN V9%
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj =25°C - 30 V
VGS gate-source voltage -12 12 V drain current VGS =4.5 V; Tamb =25°C; t ≤ 5 s [1] -1.63 A
VGS =4.5 V; Tamb =25°C [1] -1.5 A
VGS =4.5 V; Tamb =100°C [1] -1 A
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - 6 A
Ptot total power dissipation Tamb =25°C [2] - 270 mW
[1] - 350 mW
Tsp=25°C - 1920 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1] -0.7 A
NXP Semiconductors PMF77XN
30 V, single N-channel Trench MOSFETNXP Semiconductors PMF77XN
30 V, single N-channel Trench MOSFET Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s.
Table 6. Thermal characteristicsRth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 402 460 K/W
[2] - 312 360 K/W
[3] - 265 305 K/W
Rth(j-sp) thermal resistance
from junction to solder
point 5565K/W
NXP Semiconductors PMF77XN
30 V, single N-channel Trench MOSFET
