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Partno	Mfg	Dc	Qty	Available	Descript
PMG370XN	NXP	N/a	30000	avai	N-channel TrenchMOS extremely low level FET
PMG370XN	NXP/PH	N/a	10000	avai	N-channel TrenchMOS extremely low level FET

PMG370XN ,N-channel TrenchMOS extremely low level FETPMG370XNN-channel μTrenchMOS™ extremely low level FETRev. 01 — 13 February 2004 Product dataMBD1281 ..
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PMG370XN
N-channel TrenchMOS extremely low level FET
PMG370XN
N-channel μT renchMOS™ extremely low level FET
Rev. 01 — 13 February 2004 Product dataMBD128 Product proﬁle
1.1 Description
N-channel enhancement mode ﬁeld-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information Surface mounted package � Footprint 40% smaller than SOT23 Low on-state resistance � Low threshold voltage. Driver circuits � Switching in portable appliances. VDS≤30V � ID≤ 0.96A Ptot≤ 0.69W � RDSon≤ 440 mΩ.
Table 1: Pinning - SOT363 (SC-88), simpliﬁed outline and symbol drain (d)
SOT363 (SC-88) drain (d) gate (g) source (s) drain (d) drain (d)
MSA370 3 4
Top view
MBB076
Philips Semiconductors PMG370XN
N-channel μTrenchMOS™ extremely low level FET Ordering information Limiting values
Table 2: Ordering information
PMG370XN SC-88 Plastic surface mounted package; 6 leads SOT363
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) 25°C≤Tj≤ 150°C - 30 V
VDGR drain-gate voltage (DC) 25°C≤Tj≤ 150 °C; RGS =20kΩ -30 V
VGS gate-source voltage (DC) - ±12 V drain current (DC) Tsp =25 °C; VGS= 4.5V; Figure2 and3 - 0.96 A
Tsp= 100 °C; VGS= 4.5V; Figure2 - 0.61 A
IDM peak drain current Tsp =25 °C; pulsed; tp≤10 μs; Figure3 - 1.92 A
Ptot total power dissipation Tsp =25 °C; Figure1 - 0.69 W
Tstg storage temperature −55 +150 °C junction temperature −55 +150 °C
Source-drain diode source (diode forward) current (DC) Tsp =25°C - 0.57 A
ISM peak source (diode forward) current Tsp =25 °C; pulsed; tp≤10μs - 1.15 A
Philips Semiconductors PMG370XN
N-channel μTrenchMOS™ extremely low level FET
Philips Semiconductors PMG370XN
N-channel μTrenchMOS™ extremely low level FET Thermal characteristics
5.1 Transient thermal impedance
Table 4: Thermal characteristics
Rth(j-sp) thermal resistance from junctionto solder point Figure4 - - 180 K/W
Philips Semiconductors PMG370XN
N-channel μTrenchMOS™ extremely low level FET Characteristics
Table 5: Characteristics =25 °C unless otherwise speciﬁed.
Static characteristics
V(BR)DSS drain-source breakdown voltage ID =1 μA; VGS =0V =25°C 30 --V= −55°C 27 --V
VGS(th) gate-source threshold voltage ID= 0.25 mA; VDS =VGS; Figure9 =25°C 0.5 1 1.5 V= 150°C 0.35 - - V= −55°C - - 1.8 V
IDSS drain-source leakage current VDS =30V; VGS =0V =25°C --1 μA= 150°C - - 100 μA
IGSS gate-source leakage current VGS= ±12 V; VDS=0V - 10 100 nA
RDSon drain-source on-state resistance VGS= 4.5 V; ID= 0.2A; Figure7 and8 =25°C - 370 440 mΩ= 150°C - 629 748 mΩ
VGS= 2.5 V; ID= 0.1A; Figure7 and8 - 550 650 mΩ
Dynamic characteristics
Qg(tot) total gate charge ID=1 A; VDD =15V; VGS= 4.5V;
Figure13 0.65 - nC
Qgs gate-source charge - 0.14 - nC
Qgd gate-drain (Miller) charge - 0.18 - nC
Ciss input capacitance VGS =0V; VDS=25 V; f=1 MHz;
Figure11
-37 - pF
Coss output capacitance - 8.5 - pF
Crss reverse transfer capacitance - 5.5 - pF
td(on) turn-on delay time VDD =15V; RL =15Ω;
VGS= 4.5V;RG =6Ω 6.5 - ns rise time - 9.5 - ns
td(off) turn-off delay time - 14 - ns fall time - 5.5 - ns
Source-drain diode
VSD source-drain (diode forward) voltageIS= 0.3 A; VGS =0V; Figure12 - 0.78 1.2 V
Philips Semiconductors PMG370XN
N-channel μTrenchMOS™ extremely low level FET

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