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Partno	Mfg	Dc	Qty	Available	Descript
PMGD290XN	NXP/PH	N/a	10000	avai	Dual N-channel TrenchMOS extremely low level FET

PMGD290XN ,Dual N-channel TrenchMOS extremely low level FETApplications■ Driver circuits ■ Switching in portable appliances.1.4 Quick reference data■ V ≤ 20 V ..
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PMGD290XN
Dual N-channel TrenchMOS extremely low level FET
PMGD290XN
Dual N-channel μTrenchMOS™ extremely low level FET
Rev. 01 — 26 February 2004 Product dataMBD128 Product proﬁle
1.1 Description
Dual N-channel enhancement mode ﬁeld-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information Surface mounted package � Footprint 40% smaller than SOT23 Dual device � Fast switching Low on-state resistance � Low threshold voltage. Driver circuits � Switching in portable appliances. VDS≤20V � ID≤ 0.86A Ptot≤ 0.41W � RDSon≤ 350 mΩ.
Table 1: Pinning - SOT363 (SC-88), simpliﬁed outline and symbol source (s1)
SOT363 (SC-88) gate (g1) drain (d2) source (s2) gate (g2) drain (d1)
MSA370 3 4
Top view s2
MSD901
Philips Semiconductors PMGD290XN
Dual N-channel μTrenchMOS™ extremely low level FET Ordering information Limiting values
[1] Single device conducting.
Table 2: Ordering information
PMGD290XN SC-88 Plastic surface mounted package; 6 leads SOT363
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) 25°C≤Tj≤ 150°C - 20 V
VDGR drain-gate voltage (DC) 25°C≤Tj≤ 150 °C; RGS =20kΩ -20 V
VGS gate-source voltage (DC) - ±12 V drain current (DC) Tsp =25 °C; VGS= 4.5V; Figure2 and3 [1]- 0.86 A
Tsp= 100 °C; VGS= 4.5V; Figure2 [1]- 0.54 A
IDM peak drain current Tsp =25 °C; pulsed; tp≤10 μs; Figure3 [1]- 1.72 A
Ptot total power dissipation Tsp =25 °C; Figure1 - 0.41 W
Tstg storage temperature −55 +150 °C junction temperature −55 +150 °C
Source-drain diode source (diode forward) current (DC) Tsp =25°C [1]- 0.34 A
ISM peak source (diode forward) current Tsp =25 °C; pulsed; tp≤10μs [1]- 0.69 A
Philips Semiconductors PMGD290XN
Dual N-channel μTrenchMOS™ extremely low level FET
Philips Semiconductors PMGD290XN
Dual N-channel μTrenchMOS™ extremely low level FET Thermal characteristics
5.1 Transient thermal impedance
Table 4: Thermal characteristics
Rth(j-sp) thermal resistance from junctionto solder point Figure4 - - 300 K/W
Philips Semiconductors PMGD290XN
Dual N-channel μTrenchMOS™ extremely low level FET Characteristics
Table 5: Characteristics =25 °C unless otherwise speciﬁed.
Static characteristics
V(BR)DSS drain-source breakdown voltage ID =1 μA; VGS =0V =25°C 20 --V= −55°C 18 --V
VGS(th) gate-source threshold voltage ID= 0.25 mA; VDS =VGS; Figure9 =25°C 0.5 1 1.5 V= 150°C 0.35 - - V= −55°C - - 1.8 V
IDSS drain-source leakage current VDS =20V; VGS =0V =25°C --1 μA= 150°C - - 100 μA
IGSS gate-source leakage current VGS= ±12 V; VDS=0V - 10 100 nA
RDSon drain-source on-state resistance VGS= 4.5 V; ID= 0.2A; Figure7 and8 =25°C - 290 350 mΩ= 150°C - 464 560 mΩ
VGS= 4.5 V; ID= 0.66A; Figure7 and8 - 295 350 mΩ
VGS= 2.5 V; ID= 0.4A; Figure7 and8 - 490 580 mΩ
VGS= 2.5 V; ID= 0.1A; Figure7 and8 - 460 550 mΩ
Dynamic characteristics
Qg(tot) total gate charge ID=1 A; VDD =10V; VGS= 4.5V;
Figure13 0.72 - nC
Qgs gate-source charge - 0.18 - nC
Qgd gate-drain (Miller) charge - 0.18 - nC
Ciss input capacitance VGS =0V; VDS=20 V; f=1 MHz;
Figure11
-34 - pF
Coss output capacitance - 12 - pF
Crss reverse transfer capacitance - 8 - pF
td(on) turn-on delay time VDD =10V; RL =6Ω;
VGS= 4.5V;RG =6Ω -ns rise time -11 - ns
td(off) turn-off delay time - 11 - ns fall time -6 -ns
Source-drain diode
VSD source-drain (diode forward) voltageIS= 0.3 A; VGS =0V; Figure12 - 0.8 1.2 V
Philips Semiconductors PMGD290XN
Dual N-channel μTrenchMOS™ extremely low level FET

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