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Partno	Mfg	Dc	Qty	Available	Descript
PMN27UN	NXP	N/a	33000	avai	N-channel TrenchMOS ultra low level FET
PMN27UN	NXP/PH	N/a	10000	avai	N-channel TrenchMOS ultra low level FET

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PMN27UN ,N-channel TrenchMOS ultra low level FETPMN27UNTrenchMOS™ ultra low level FETRev. 01 — 27 September 2002 Product dataM3D3021. DescriptionN- ..
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PMN27UN
N-channel TrenchMOS ultra low level FET
PMN27UN renchMOS™ ultra low level FET
Rev. 01 — 27 September 2002 Product dataM3D302 Description
N-channel enhancement mode ﬁeld-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMN27UN in SOT457 (TSOP6). Features TrenchMOS™ technology Very fast switching Low threshold voltage Surface mount package. Applications Battery powered motor control Load switch in notebook computers High speed switch in set top box power supplies Driver FET in DC to DC converters. Pinning information
Table 1: Pinning - SOT457 (TSOP6), simpliﬁed outline and symbol
1,2,5,6 drain (d)
SOT457 (TSOP6) gate (g) source (s)
MBK092Top view
MBB076
Philips Semiconductors PMN27UN
TrenchMOS™ ultra low level FET Quick reference data Limiting values
Table 2: Quick reference data
VDS drain-source voltage (DC) 25°C≤Tj≤ 150°C - 20 V drain current (DC) Tsp =25 °C; VGS= 4.5V - 5.7 A
Ptot total power dissipation Tsp =25°C - 1.75 W junction temperature - 150 °C
RDSon drain-source on-state resistance VGS= 4.5 V; ID=2 A; Tj =25°C 2734mΩ
VGS= 2.5 V; ID=2 A; Tj =25°C 3240mΩ
VGS= 1.8 V; ID= 1.5 A; Tj =25°C 3956mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) 25°C≤Tj≤ 150°C - 20 V
VGS gate-source voltage (DC) - ±8V drain current (DC) Tsp =25 °C; VGS= 4.5V; Figure 2 and3 - 5.7 A
Tsp =70 °C; VGS= 4.5V; Figure2 - 4.5 A
IDM peak drain current Tsp =25 °C; pulsed; tp≤10 μs; Figure3 - 22.9 A
Ptot total power dissipation Tsp =25 °C; Figure1 - 1.75 W
Tstg storage temperature −55 +150 °C junction temperature −55 +150 °C
Source-drain diode source (diode forward) current (DC) Tsp =25°C - 1.45 A
Philips Semiconductors PMN27UN
TrenchMOS™ ultra low level FET
Philips Semiconductors PMN27UN
TrenchMOS™ ultra low level FET Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristics
Rth(j-sp) thermal resistance from junction to solder point mountedona metal clad board; Figure4 --70 K/W
Philips Semiconductors PMN27UN
TrenchMOS™ ultra low level FET Characteristics
Table 5: Characteristics =25 °C unless otherwise speciﬁed.
Static characteristics
V(BR)DSS drain-source breakdown voltage ID= 250 μA; VGS=0V 20 --V
VGS(th) gate-source threshold voltage ID=1 mA; VDS =VGS; Figure9 0.4 0.7 - V
IDSS drain-source leakage current VDS =16V; VGS =0V =25°C - 0.01 1.0 μA =55°C --10 μA
IGSS gate-source leakage current VGS=±8 V; VDS=0V - 10 100 nA
RDSon drain-source on-state resistance VGS= 4.5 V; ID =2A; Figure 7 and8 - 2734mΩ
VGS= 2.5 V; ID =2A; Figure 7 and8 - 3240mΩ
VGS= 1.8 V; ID= 1.5A; Figure 7 and8 - 3956mΩ
Dynamic characteristics
Qg(tot) total gate charge VDD =10V; VGS= 4.5 V; ID= 3.8A; Figure13 - 10.6- nC
Qgs gate-source charge - 1.8 - nC
Qgd gate-drain (Miller) charge - 2.1 - nC
Ciss input capacitance VGS =0V; VDS=10 V; f=1 MHz; Figure11 - 740 - pF
Coss output capacitance - 185 - pF
Crss reverse transfer capacitance - 125 - pF
td(on) turn-on delay time VDD =10V; RD =10 Ω; VGS= 4.5 V; RG =6Ω - 8.5 - ns rise time - 14.5- ns
td(off) turn-off delay time - 55 - ns fall time -16 - ns
Source-drain diode
VSD source-drain (diode forward) voltageIS= 1.7 A; VGS =0V; Figure12 - 0.8 1.2 V
Philips Semiconductors PMN27UN
TrenchMOS™ ultra low level FET

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