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Partno	Mfg	Dc	Qty	Available	Descript
PMN38EN	NXP	N/a	90000	avai	N-channel TrenchMOS logic level FET
PMN38EN	NXP/PHILIPS	N/a	1730000	avai	N-channel TrenchMOS logic level FET

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PMN38EN
N-channel TrenchMOS logic level FET
Product profile1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package. This product is designed and qualified for use in computing, communications,
consumer and industrial applications only.
1.2 Features
1.3 Applications
1.4 Quick reference data
PMN38EN
N-channel TrenchMOS logic level FET
Rev. 02 — 3 October 2007 Product data sheet Logic level threshold Low threshold voltage Surface-mounted package Very fast switching Battery powered motor control Driver FET in DC-to-DC converters High speed switch in set top box power
supplies Load switch in notebook computers
Table 1. Quick reference
VDS drain-source voltage Tj≥25 °C; Tj≤ 150°C --30 V drain current Tsp =25 °C; VGS =10V;
see Figure 1 and 3
--5.4 A
Ptot total power dissipation Tsp =25 °C; see Figure2 --1.75 W
Static characteristics
RDSon drain-source on-state
resistance
VGS =4.5 V; ID =2.8A; =25 °C; see Figure 8 and 9 3846mΩ
NXP Semiconductors PMN38EN
N-channel TrenchMOS logic level FET Pinning information Ordering information Limiting values
Table 2. Pinning D drain
SOT457 (TSOP6) D drain G gate S source D drain D drain
Table 3. Ordering information
PMN38EN TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 150 °C- 30 V
VGS gate-source voltage -20 20 V drain current Tsp =100 °C; VGS=10 V; see Figure1 -3.4 A
Tsp =25 °C; VGS=10 V; see Figure 1 and 3 -5.4 A
IDM peak drain current Tsp =25 °C; tp≤10 μs; pulsed; see Figure3 - 21.6 A
Ptot total power dissipation Tsp =25 °C; see Figure2 -1.75 W
Tstg storage temperature -55 150 °C junction temperature -55 150 °C
Source-drain diode source current Tsp =25°C - 1.45 A
ISM peak source current Tsp =25 °C; tp =10 μs; pulsed - 5.8 A
NXP Semiconductors PMN38EN
N-channel TrenchMOS logic level FET
NXP Semiconductors PMN38EN
N-channel TrenchMOS logic level FET Thermal characteristics
[1] Mounted on a metal clad board Characteristics
Table 5. Thermal characteristics
Rth(j-sp) thermal resistance
from junction to solder
point
see Figure4 [1] -- 70 K/W
Table 6. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =250 μA; VGS =0V; =-55°C - - V =250 μA; VGS =0V; =25°C - - V
VGS(th) gate-source threshold
voltage =1mA; VDS = VGS; = 150°C
0.6 - - V=1 mA; VDS = VGS; Tj =-55 °C- - 2.2 V =1mA; VDS = VGS; Tj =25 °C;
see Figure7
11.5 2V
IDSS drain leakage current VDS =30V; VGS =0V; Tj =25°C - 0.01 0.1 μA
VDS =30V; VGS =0V; = 150°C 10 μA
NXP Semiconductors PMN38EN
N-channel TrenchMOS logic level FET
IGSS gate leakage current VGS =+20 V; VDS =0V; =25°C 10 100 nA
VGS =-20 V; VDS =0V; =25°C 10 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =3A; Tj =150 °C- 49.6 60.9 mΩ
VGS =4.5 V; ID =2.8A; =25 °C; see Figure 8 and 9
-38 46 mΩ
VGS =10V; ID =3A; Tj =25 °C;
see Figure 8 and 9
-31 38 mΩ
Dynamic characteristics
QG(tot) total gate charge ID =5A; VDS =15V;
VGS =4.5 V; Tj =25 °C;
see Figure 10 and 11
-6.1 -nC
QGS gate-source charge ID =5A; VDS =15V;
VGS =4.5 V; Tj =25 °C;
see Figure 10 and 11
-1.7 -nC
QGD gate-drain charge ID =5A; VDS =15V;
VGS =4.5 V; Tj =25 °C;
see Figure 10 and 11
-2.35 - nC
Ciss input capacitance VDS =25V; VGS =0V;
f=1MHz; Tj =25 °C;
see Figure12
-495 -pF
Coss output capacitance VGS =0V; VDS =25V;
f=1MHz; Tj =25 °C;
see Figure12
-100 -pF
Crss reverse transfer
capacitance
VDS =25V; VGS =0V;
f=1MHz; Tj =25 °C;
see Figure12
-70 - pF
td(on) turn-on delay time RG(ext) =6 Ω; RL =12Ω;
VDS =15V; VGS =4.5V; =25°C
-14 - ns rise time RG(ext) =6 Ω; RL =12Ω;
VDS =15V; VGS =4.5V; =25°C
-19 - ns
td(off) turn-off delay time VDS =15V; RL =12Ω;
VGS =4.5 V; RG(ext) =6Ω; =25°C
-28 - ns fall time RG(ext) =6 Ω; RL =12Ω;
VDS =15V; VGS =4.5V; =25°C
-16 - ns
Source-drain diode
VSD source-drain voltage IS= 1.7 A; VGS =0V; Tj =25 °C;
see Figure13
-0.75 1.2 V
trr reverse recovery time IS= 2.3 A; dIS/dt= 100 A/μs;
VGS =0V; VDS =30V; Tj =25°C
-22 - ns
Table 6. Characteristics …continued
NXP Semiconductors PMN38EN
N-channel TrenchMOS logic level FET

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