PMN50UPE Fast Delivery |IC PHOENIX CO.,LIMITED

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PMN50UPE
20 V, single P-channel Trench MOSFET
PMN50UPE
20 V, single P-channel Trench MOSFET20 July 2012 Product data sheet Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits 3 kV ESD protected• Trench MOSFET technology• Low threshold voltage
1.3 Applications Relay driver• High-side loadswitch• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - -20 V
VGS gate-source voltage
Tj = 25 °C - 8 V drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -4 A
Static characteristics
RDSon drain-source on-state
resistance
VGS = -4.5 V; ID = -3.6 A; Tj = 25 °C - 50 66 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
NXP Semiconductors PMN50UPE
20 V, single P-channel Trench MOSFET Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol D drain D drain G gate S source D drain D drain 3256
TSOP6 (SOT457)
017aaa259 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMN50UPE TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 Marking
Table 4. Marking codes
Type number Marking code
PMN50UPE WH Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - -20 V
VGS gate-source voltage
Tj = 25 °C 8 V
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -4 A
VGS = -4.5 V; Tamb = 25 °C [1] - -3.6 A drain current
VGS = -4.5 V; Tamb = 100 °C [1] - -2.3 A
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -14.4 A
[2] - 510 mWTamb = 25 °C
[1] - 1235 mW
Ptot total power dissipation - 5000 mW
NXP Semiconductors PMN50UPE
20 V, single P-channel Trench MOSFET
Symbol Parameter Conditions Min Max Unit junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb = 25 °C [1] - -1.3 A
ESD maximum rating
VESD electrostatic discharge voltage HBM [3] - 3000 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.[3] Measured between all pins.(°C)-75 17512525 75-25
017aaa123
Pder(%)
Fig. 1. Normalized total power dissipation as a
function of junction temperature (°C)-75 17512525 75-25
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Ider(%)
Fig. 2. Normalized continuous drain current as a
function of junction temperature
NXP Semiconductors PMN50UPE
20 V, single P-channel Trench MOSFET
017aaa704
-102(A)
VDS (V)-10-1 -102-10-1
tp = 1 ms
tp = 10 ms
tp = 100 ms
Limit RDSon = VDS/ID
DC; Tsp = 25 °C
DC; Tamb = 25 °C; drain mounting pad 6 cm2
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 213 245 K/W
[2] - 88 100 K/W
Rth(j-a) thermal resistancefrom junction to
ambient
in free air
[3] - 70 81 K/W
Rth(j-sp) thermal resistance
from junction to solderpoint 21 25 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2]2.[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 , t ≤ 5 s.
NXP Semiconductors PMN50UPE
20 V, single P-channel Trench MOSFET
017aaa281
tp (s)10-3 102 10310110-2 10-12
Zth(j-a)(K/W)
duty cycle = 1
0.75 0.50.33 0.250.2
0.05 0.02
0.01 0
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa282
tp (s)10-3 102 10310110-2 10-1
Zth(j-a)(K/W)
duty cycle = 1
0.75 0.5
0.33 0.250.2 0.1
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values Characteristics Max Unit - V -0.9 V -1 µA -10 µA
NXP Semiconductors PMN50UPE
20 V, single P-channel Trench MOSFET
Symbol Parameter Conditions Min Typ Max Unit
VGS = -8 V; VDS = 0 V; Tj = 25 °C - - 10 µAIGSS gate leakage current
VGS = 8 V; VDS = 0 V; Tj = 25 °C - - -10 µA
VGS = -4.5 V; ID = -3.6 A; Tj = 25 °C - 50 66 mΩ
VGS = -4.5 V; ID = -3.6 A; Tj = 150 °C - 73 96 mΩ
VGS = -2.5 V; ID = -2.1 A; Tj = 25 °C - 57 81 mΩ
RDSon drain-source on-stateresistance
VGS = -1.8 V; ID = -2.1 A; Tj = 25 °C - 70 110 mΩ
gfs forward transconductance VDS = -5 V; ID = -3.6 A; Tj = 25 °C - 18 - S
Dynamic characteristics
QG(tot) total gate charge - 10.5 15.7 nC
QGS gate-source charge - 2.2 - nC
QGD gate-drain charge
VDS = -10 V; ID = -3.2 A; VGS = -4.5 V;
Tj = 25 °C 2.7 - nC
Ciss input capacitance - 24 - pF
Coss output capacitance - 106 - pF
Crss reverse transfercapacitance
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C 14.6 - pF
td(on) turn-on delay time - 400 - ns rise time - 700 - ns
td(off) turn-off delay time - 2180 - ns fall time
VDS = -10 V; ID = -3.6 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C 8800 - ns
Source-drain diode
VSD source-drain voltage IS = -1.3 A; VGS = 0 V; Tj = 25 °C - -0.8 -1.2 V
017aaa694
-15(A)
-4.5V-3V-3.5VV
-1.8V
017aaa695
VGS (V)0 -1.5-1.0-0.5
-10-3(A)
min typ max
Tj = 25 °C; VDS = -5 V
Fig. 7. Sub-threshold drain current as a function of
NXP Semiconductors PMN50UPE
20 V, single P-channel Trench MOSFET
ID (A)0 -12-8-4
017aaa696140RDSon(mΩ)
VGS=-4.5V
-1.5V -1.8V
-2V
-2.5V
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a functionof drain current; typical values
017aaa697
VGS (V)0 -12-8-4
RDSon(mΩ)=150°C=25°C
ID = -1 A
Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values
VGS (V)0 -3-2-1
017aaa698
-12(A)=150°C Tj=25°C
VDS > ID × RDSon
Tj (°C)-60 1801200 60
017aaa699
Fig. 11. Normalized drain-source on-state resistanceas a function of junction temperature; typical
values

Partno	Mfg	Dc	Qty	Available	Descript
PMN50UPE	NXP/PH	N/a	10000	avai	20 V, single P-channel Trench MOSFET