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PMP4501G-PMP4501Y
NPN/NPN matched double transistors
Product profile1.1 General descriptionNPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistorsin the SOT666 and SOT363 (SC-88) packages are fully isolated
internally.
1.2 Features Current gain matching Base-emitter voltage matching Common emitter configuration for SOT353 types Application-optimized pinout
1.3 Applications Current mirror Differential amplifier
1.4 Quick reference data
PMP4501V; PMP4501G;
PMP4501Y
NPN/NPN matched double transistors
Rev. 04 — 28 August 2009 Product data sheet
Table 1. Product overviewPMP4501V SOT666 - PMP4201V PMP5501V
PMP4501G SOT353 SC-88A PMP4201G PMP5501G
PMP4501Y SOT363 SC-88 PMP4201Y PMP5501Y
Table 2. Quick reference data
Per transistorVCEO collector-emitter voltage open base - - 45 V collector current - - 100 mA
hFE DC current gain VCE =5V; =2mA
200 290 450
NXP Semiconductors PMP4501V; PMP4501G; PMP4501Y
NPN/NPN matched double transistors[1] The smaller of the two values is taken as the numerator.
[2] The smaller of the two values is subtracted from the larger value.
Pinning information Ordering information
Per devicehFE1/hFE2 hFE matching VCE =5V; =2mA
[1] 0.95 1 -
VBE1−VBE2 VBE matching VCE =5V; =2mA
[2] --2 mV
Table 2. Quick reference data …continued
Table 3. Pinning
SOT666; SOT363 base TR1 base TR2 collector TR2 emitter TR2 emitter TR1 collector TR1
SOT353 base TR1 emitter TR1, TR2 base TR2 collector TR2 collector TR1
001aab555 006aaa5482156
006aaa549
Table 4. Ordering information
PMP4501V - plastic surface-mounted package; 6 leads SOT666
PMP4501G SC-88A plastic surface-mounted package; 5 leads SOT353
PMP4501Y SC-88 plastic surface-mounted package; 6 leads SOT363
NXP Semiconductors PMP4501V; PMP4501G; PMP4501Y
NPN/NPN matched double transistors Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 5. Marking codesPMP4501V EB
PMP4501G R6*
PMP4501Y S8*
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 6 V collector current - 100 mA
ICM peak collector current single pulse;≤ 1ms 200 mA
Ptot total power dissipation Tamb≤25°C
SOT666 [1][2]- 200 mW
SOT353 [1]- 200 mW
SOT363 [1]- 200 mW
Per devicePtot total power dissipation Tamb≤25°C
SOT666 [1][2]- 300 mW
SOT353 [1]- 300 mW
SOT363 [1]- 300 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PMP4501V; PMP4501G; PMP4501Y
NPN/NPN matched double transistors Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Characteristics
Table 7. Thermal characteristics
Per transistorRth(j-a) thermal resistance from
junction to ambient
in free air
SOT666 [1][2]- - 625 K/W
SOT353 [1]- - 625 K/W
SOT363 [1]- - 625 K/W
Per deviceRth(j-a) thermal resistance from
junction to ambient
in free air
SOT666 [1][2]- - 416 K/W
SOT353 [1]- - 416 K/W
SOT363 [1]- - 416 K/W
Table 8. CharacteristicsTamb =25 °C unless otherwise specified
Per transistorICBO collector-base cut-off
current
VCB =30V; =0A - 15 nA
VCB =30V; =0A;= 150°C
--5 μA
IEBO emitter-base cut-off
current
VEB =5V; =0A - 100 nA
hFE DC current gain VCE =5V; =10μA 250 -
VCE =5V; =2mA
200 290 450
VCEsat collector-emitter
saturation voltage=10 mA;= 0.5 mA 50 200 mV= 100 mA; =5mA 200 400 mV
VBEsat base-emitter saturation
voltage=10 mA;= 0.5 mA
[1]- 760 - mV= 100 mA; =5mA
[1]- 910 - mV
NXP Semiconductors PMP4501V; PMP4501G; PMP4501Y
NPN/NPN matched double transistors[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
VBE base-emitter voltage VCE =5V; =2mA
[2] 610 660 710 mV
VCE =5V; =10mA
[2]- - 770 mV collector capacitance VCB =10V; =ie =0A;
f=1MHz - 1.5 pF emitter capacitance VEB= 0.5V; =ic =0A;
f=1MHz
-11 - pF transition frequency VCE =5V;=10 mA;= 100 MHz
100 250 - MHz noise figure VCE =5V;= 0.2 mA; =2kΩ;=10 Hz to
15.7 kHz 2.8 - dB
VCE =5V;= 0.2 mA; =2kΩ;=1 kHz;= 200Hz 3.3 - dB
Per devicehFE1/hFE2 hFE matching VCE =5V; =2mA
[3] 0.95 1 -
VBE1−VBE2 VBE matching VCE =5V; =2mA
[4] --2 mV
Table 8. Characteristics …continuedTamb =25 °C unless otherwise specified
NXP Semiconductors PMP4501V; PMP4501G; PMP4501Y
NPN/NPN matched double transistors
NXP Semiconductors PMP4501V; PMP4501G; PMP4501Y
NPN/NPN matched double transistors
