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PRTR5V0U2D
Ultra low capacitance double rail-to-rail ESD protection
Product profile1.1 General descriptionUltra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection devicein SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
The device is designed to protect two Hi-Speed data lines or high-frequency signal lines
from the damage caused by ESD and other transients.
PRTR5V0U2D integrates two ultra low capacitance rail-to-rail ESD protection channels
and one additional ESD protection diodeto ensure signal line protection evenifno supply
voltage is available.
1.2 Features ESD protection of two Hi-Speed data lines or high-frequency signal lines Ultra low input/output to ground capacitance: C(I/O-GND) =1pF ESD protection up to 8 kV IEC 61000-4-2, level4 (ESD) Very low clamping voltage due to an integrated additional ESD protection diode Very low reverse current AEC-Q101 qualified (85 °C) Small SMD plastic package
1.3 Applications USB 2.0 interfaces Digital Video Interface (DVI) High Definition Multimedia Interface (HDMI) Mobile and cordless phones Personal Digital Assistants (PDA) Digital cameras Wide Area Network (WAN) / Local Area Network (LAN) systems PCs, notebooks, printers and other PC peripherals
PRTR5V0U2D
Ultra low capacitance double rail-to-rail ESD protection
Rev. 01 — 28 April 2009 Product data sheet
NXP Semiconductors PRTR5V0U2D
Ultra low capacitance double rail-to-rail ESD protection
1.4 Quick reference data[1] Measured from pin 1, 3, 4 or 6 to ground.
[2] Measured from pin 1 or 6 to pin 3 or4.
[3] Measured from pin 5 to ground.
Pinning information Ordering information Marking
Table 1. Quick reference dataTamb =25 °C unless otherwise specified.
Per channelC(I/O-GND) input/output to ground
capacitance=1 MHz;
V(I/O-GND) =0V
[1]- 1.0 1.5 pF
C(I/O-I/O) input/output to input/output
capacitance=1 MHz;
V(I/O-I/O) =0V
[2]- 0.6 - pF
Zener diodeVRWM reverse standoff voltage [3]- - 5.5 V
Csup supply pin to ground
capacitance=1 MHz;
VCC =0V
[3] -16 - pF
Table 2. Pinning I/O1 input/output1 GND ground I/O2 input/output2 I/O2 input/output2
5VCC supply voltage I/O1 input/output1
006aab349
Table 3. Ordering informationPRTR5V0U2D SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codesPRTR5V0U2D ZB
NXP Semiconductors PRTR5V0U2D
Ultra low capacitance double rail-to-rail ESD protection Limiting values[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1, 3, 4 or 6 to pin 2 or5.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per deviceTamb ambient temperature −40 +85 °C
Tstg storage temperature −55 +125 °C
Table 6. ESD maximum ratingsTamb =25 °C unless otherwise specified.
Per channelVESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2] -8 kV
MIL-STD-883 (human
body model)
[2] -10 kV
NXP Semiconductors PRTR5V0U2D
Ultra low capacitance double rail-to-rail ESD protection
Table 7. ESD standards compliance
Per channelIEC 61000-4-2; level 4 (ESD) >8kV (contact)
MIL-STD-883; class 3 (human body model) >4kV
NXP Semiconductors PRTR5V0U2D
Ultra low capacitance double rail-to-rail ESD protection Characteristics[1] Measured from pin 1, 3, 4 or 6 to ground.
[2] Measured from pin 1 or 6 to pin 3 or4.
[3] Measured from pin 1, 3, 4 or 6 to pin5.
[4] Measured from pin 5 to ground.
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
Per channel reverse current VR =5V [1]- <1 100 nA
C(I/O-GND) input/output to ground
capacitance=1 MHz;
V(I/O-GND) =0V
[1]- 1.0 1.5 pF
C(I/O-I/O) input/output to input/output
capacitance=1 MHz;
V(I/O-I/O) =0V
[2]- 0.6 - pF forward voltage IF =1mA [3]- 0.7 - V
Zener diodeVRWM reverse standoff voltage [4]- - 5.5 V
VBR breakdown voltage [4] 6- 9V
Csup supply pin to ground
capacitance=1 MHz;
VCC =0V
[4] -16 - pF
NXP Semiconductors PRTR5V0U2D
Ultra low capacitance double rail-to-rail ESD protection
