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PSMN034-100PS |PSMN034100PSNXP/PHN/a10000avaiN-channel 100 V 34.5 m鈩?standard level MOSFET in TO220.
PSMN034-100PS |PSMN034100PSNXPN/a800avaiN-channel 100 V 34.5 m鈩?standard level MOSFET in TO220.


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PSMN034-100PS
N-channel 100 V 34.5 m鈩?standard level MOSFET in TO220.
PSMN034-100PS
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
Rev. 02 — 1 March 2010 Objective data sheet Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data Table 1. Quick reference
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 100 V drain current Tmb =25°C; VGS =10V;
see Figure 1
--32 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 --86 W junction temperature -55 - 175 °C
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; =32 A; Vsup≤ 100V;
unclamped; RGS =50Ω
--42 mJ
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =15A;
VDS=50 V; see Figure 12
and 13
-6.9 -nC
QG(tot) total gate charge - 23.8 - nC
Static characteristics
RDSon drain-source
on-state resistance
VGS =10V; ID =15A; = 100 °C; see Figure 11
--62 mΩ
VGS =10V; ID =15A; =25 °C; see Figure 16 29.3 34.5 mΩ
NXP Semiconductors PSMN034-100PS
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220. Pinning information Ordering information
Table 2. Pinning information gate
SOT78 (TO-220AB) drain source D mounting base; connected to
drain
Table 3. Ordering information
PSMN034-100PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
NXP Semiconductors PSMN034-100PS
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 100 V
VDGR drain-gate voltage Tj≤ 175 °C; Tj≥25 °C; RGS =20kΩ -100 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 -22 A
VGS =10V; Tmb =25°C; see Figure 1 -32 A
IDM peak drain current tp≤10 µs; pulsed; Tmb =25°C; see Figure 3 -127 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -86 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering
temperature
-260 °C
Source-drain diode source current Tmb =25°C - 32 A
ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 127 A
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source avalanche
energy
VGS =10V; Tj(init) =25°C; ID =32A; Vsup≤ 100V;
unclamped; RGS =50Ω
-42 mJ
NXP Semiconductors PSMN034-100PS
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
NXP Semiconductors PSMN034-100PS
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220. Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 - 0.9 1.7 K/W
Rth(j-a) thermal resistance from junction to ambient vertical in free air - 50 - K/W
NXP Semiconductors PSMN034-100PS
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220. CharacteristicsTable 6. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj =-55°C 90 - - V =0.25mA; VGS =0V; Tj =25°C 100 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS = VGS; Tj= 175 °C; see Figure 9 1- - V =1mA; VDS = VGS; Tj =25°C; see Figure 10
and 9 4V =1mA; VDS = VGS; Tj =-55 °C; see Figure 9
and 10 4.8 V
IDSS drain leakage current VDS =100 V; VGS =0V; Tj= 125°C - - 50 µA
VDS =100 V; VGS =0V; Tj=25°C - 0.02 1 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 10 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =15A; Tj= 100 °C;
see Figure 11 62 mΩ
VGS =10V; ID =15A; Tj= 175 °C;
see Figure 11 82.1 96 mΩ
VGS =10V; ID =15A; Tj =25°C; see Figure 16 - 29.3 34.5 mΩ internal gate resistance
(AC)
f=1MHz - 1 - Ω
Dynamic characteristics
QG(tot) total gate charge ID =15A; VDS =50V; VGS =10V;
see Figure 12 and 13 23.8 - nC =0A; VDS =0V; VGS =10V - 19 - nC
QGS gate-source charge ID =15A; VDS =50V; VGS =10V;
see Figure 12 and 13
-5.5 -nC
QGS(th) pre-threshold
gate-source charge =15A; VDS =50V; VGS =10V;
see Figure 12
-3.6 -nC
QGS(th-pl) post-threshold
gate-source charge
-1.9 -nC
QGD gate-drain charge ID =15A; VDS =50V; VGS =10V;
see Figure 12 and 13
-6.9 -nC
VGS(pl) gate-source plateau
voltage
VDS =50V; see Figure 12 and 13 -4.4 -V
Ciss input capacitance VDS =50V; VGS=0 V; f=1 MHz; Tj =25°C;
see Figure 14 1201 - pF
Coss output capacitance - 94 - pF
Crss reverse transfer
capacitance
-61 - pF
td(on) turn-on delay time VDS =50V; RL =3.3 Ω; VGS =10V;
RG(ext) =4.7 Ω; Tj =25°C
-12 - ns rise time - 10 - ns
td(off) turn-off delay time - 28 - ns fall time -9 -ns
NXP Semiconductors PSMN034-100PS
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
Source-drain diode
VSD source-drain voltage IS =15A; VGS =0V; Tj=25 °C; see Figure 17 - 0.85 1.2 V
trr reverse recovery time IS =5A; dIS/dt= 100 A/µs; VGS =0V;
VDS =50V
-38 - ns recovered charge - 59 - nC
Table 6. Characteristics …continued
NXP Semiconductors PSMN034-100PS
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
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