PTF080101S ,LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZapplications in the 860 to 960 MHz band. Full gold metalliza-• Typical EDGE performancetion ensure ..
PTF080451E ,LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHzCharacteristic Symbol Min Typ Max UnitsError Vector Magnitude EVM (RMS) — 2.0 — %Modulation Spectru ..
PTF080601E ,LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHzapplications in the 860 to 960 MHz band. Full gold• Typical EDGE performancemetallization ensures ..
PTF080601F ,LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHzCharacteristic Symbol Min Typ Max UnitsError Vector Magnitude EVM (RMS) — 2.0 — %Modulation Spectru ..
PTF080901 ,LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHzCharacteristics at T = 25°C unless otherwise indicatedCASEEDGE Measurements (not subject to product ..
PTF080901E ,LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHzCharacteristic Symbol Min Typ Max UnitError Vector Magnitude EVM (RMS) — 2.5 — %Modulation Spectrum ..
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PTF080101S
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
Advance InformationPTF080101
LDMOS RF Power Field Effect Transistor10 W, 860–960 MHz
FeaturesBroadband internal matchingTypical EDGE performance- Average output power = 4.0 W
- Gain = 19 dB
- Efficiency = 31%Typical CW performance- Output power at P–1dB = 13 W
- Gain = 18 dB
- Efficiency = 55%Integrated ESD protection: Human Body
Model, Class 1 (minimum)Excellent thermal stabilityLow HCI driftCapable of handling 10:1 VSWR @ 28 V,10 W (CW) output power
ESD: Electrostatic discharge sensitive device—observe handling precautions!
DescriptionThe PTF080101 is a 10 W, internally matched GOLDMOS FET intended
for EDGE applications in the 860 to 960 MHz band. Full gold metalliza-tion ensures excellent device lifetime and reliability.
PTF080101S
Package 32259
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)VDD = 28 V, IDQ = 150 mA, POUT = 4.0 W, f = 959.8 MHz
CharacteristicSymbolMinTypMaxUnitsError Vector MagnitudeEVM (RMS)—1.3—%
Modulation Spectrum @ 400 kHzACPR—–61—dBc
Modulation Spectrum @ 600 kHzACPR—–75—dBc
GainGps—19—dB
Drain EfficiencyhD—31—%
Two–Tone Measurements (tested in Infineon test fixture)VDD = 28 V, IDQ = 150 mA, POUT = 10 W PEP, f = 960 MHz, tone spacing = 1 MHz
CharacteristicSymbolMinTypMaxUnitsGainGps—19—dB
DC Characteristics at TCASE = 25°C unless otherwise indicated
CharacteristicConditionsSymbolMinTypMaxUnitsDrain–Source Breakdown VoltageVGS = 0 V, IDS = 10 µAV(BR)DSS65——V
Drain Leakage CurrentVDS = 28 V, VGS = 0 VIDSS——1.0µA
On–State ResistanceVGS = 10 V, I DS = 0.1 A RDS(on) — 0.83 — Ω
Operating Gate VoltageVDS = 28 V, IDQ = 150 mAVGS—3.2—V
Gate Leakage CurrentVGS = 10 V, V DS = 0 V IGSS — — 1.0 µA
Maximum Ratings
ParameterSymbolValueUnitDrain–Source VoltageVDSS65V
Gate–Source VoltageVGS–0.5 to +12V
Operating Junction TemperatureTJ200°C
Total Device DissipationPD58W
Above 25°C derate by0.333W/°C
Storage Temperature RangeTSTG–40 to +150°C
Thermal Resistance (TCASE = 70°C), ws1 W CW) RqJC 3.0 °C/W
Ordering Information
Package Outline SpecificationsFind the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2004-03-08
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2004.
All Rights Reserved.
Attention please!The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non–infringement, regarding circuits,
descriptions and charts stated herein.
InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
WarningsDue to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life–support devices or systems with the express written approval ofInfineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life–support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
PTF080101
Confidential
Revision History:2004-03-08Developmental Data Sheet
Previous Version:none
This datasheet has been downloaded from:
www.ic-phoenix.com
Datasheets for electronic components.
