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Partno	Mfg	Dc	Qty	Available	Descript
PTF080451E	NF	N/a	100	avai	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz

PTF080451E ,LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHzCharacteristic Symbol Min Typ Max UnitsError Vector Magnitude EVM (RMS) — 2.0 — %Modulation Spectru ..
PTF080601E ,LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHzapplications in the 860 to 960 MHz band. Full gold• Typical EDGE performancemetallization ensures ..
PTF080601F ,LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHzCharacteristic Symbol Min Typ Max UnitsError Vector Magnitude EVM (RMS) — 2.0 — %Modulation Spectru ..
PTF080901 ,LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHzCharacteristics at T = 25°C unless otherwise indicatedCASEEDGE Measurements (not subject to product ..
PTF080901E ,LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHzCharacteristic Symbol Min Typ Max UnitError Vector Magnitude EVM (RMS) — 2.5 — %Modulation Spectrum ..
PTF080901F ,LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHzapplications in the 860 to 960 MHz band. Full gold• Typical EDGE performancemetallization ensures ..
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PTF080451E
LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080451
LDMOS RF Power Field Effect Transistor45 W, 869–960 MHz
FeaturesBroadband internal matchingTypical EDGE performance- Average output power = 22.5 W
- Gain = 18 dB
- Efficiency = 40%Typical CW performance- Output power at P–1dB = 60 W
- Gain = 17 dB
- Efficiency = 60%Integrated ESD protection: Human Body
Model, Class 1 (minimum)Excellent thermal stabilityLow HCI driftCapable of handling 10:1 VSWR @ 28 V,45 W (CW) output power
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
PTF080451E
Package 30265
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 22.5 W, f = 959.8 MHz
CharacteristicSymbolMinTypMaxUnits
Error Vector MagnitudeEVM (RMS)—2.0—%
Modulation Spectrum @ 400 kHzACPR—–62—dBc
Modulation Spectrum @ 600 kHzACPR—–76—dBc
GainGps—18—dB
Drain EfficiencyhD—40—%
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 45 W PEP, f = 960 MHz, tone spacing = 1 MHz
CharacteristicSymbolMinTypMaxUnits
GainGps1718—dB
DC Characteristics at TCASE = 25°C unless otherwise indicated
CharacteristicConditionsSymbolMinTypMaxUnits
Drain–Source Breakdown VoltageVGS = 0 V, IDS = 10 µAV(BR)DSS65——V
Drain Leakage CurrentVDS = 28 V, VGS = 0 VIDSS——1.0µA
On–State ResistanceVGS = 10 V, VDS = 0.1 VRDS(on)—0.1—W
Operating Gate VoltageVDS = 28 V, IDQ = 450 mAVGS2.53.24V
Gate Leakage CurrentVGS = 10 V, VDS = 0 VIGSS——1.0µA
Maximum Ratings
ParameterSymbolValueUnit
Drain–Source VoltageVDSS65V
Gate–Source VoltageVGS–0.5 to +12V
Junction TemperatureTJ200°C
Total Device DissipationPD184W
Above 25°C derate by1.05W/°C
Storage Temperature RangeTSTG–40 to +150°C
Thermal Resistance (TCASE = 70°C)RqJC0.95°C/W
Typical Performance (measurements taken in production test fixture)
Typical Performance (cont.)
Typical Performance (cont.)
Typical Performance (cont.)
Test Circuit
Test Circuit Schematic for 960 MHz
Circuit Assembly Information

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