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PTF180601C-PTF180601E
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
PTF180601C
Package 21248
LDMOS Field Effect Transistor60 W, DCS/PCS Band
1805–1880 MHz, 1930–1990 MHz
DescriptionThe PTF180601 is a 60 W, internally matched GOLDMOS FET intended for
EDGE applications in the DCS/PCS Band. Full gold metallization ensures
excellent device lifetime and reliability.
FeaturesBroadband internal matchingTypical two-tone performance
- Average output power = 30 W
- Gain = 16.5 dB
- Efficiency = 35%Typical CW performance
- Output power at P–1dB = 75 W
- Gain = 15.5 dB
- Efficiency = 47%Integrated ESD protection: Human Body
Model, Class 1 (minimum)Excellent thermal stabilityLow HCI DriftCapable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
PTF180601
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)VDD = 28 V, IDQ = 800 mA, POUT = 22 W, f = 1989.8 MHz
CharacteristicSymbolMinTypMaxUnitsError Vector MagnitudeEVM (RMS)—1.7—%
Modulation Spectrum @ 400 KHzACPR—–60—dBc
Modulation Spectrum @ 600 KHzACPR—–73—dBc
GainGps—16.5—dB
Drain EfficiencyhD—32—%
Two–Tone Measurements (tested in Infineon test fixture)VDD = 28 V, IDQ = 800 mA, POUT = 60 W PEP, f = 1930 MHz, Tone Spacing = 1 MHz
CharacteristicSymbolMinTypMaxUnitsGainGps1516.5—dB
ESD: Electrostatic discharge sensitive device — observe handling precautions!PTF180601E
Package 30248
Electrical Characteristics at TCASE = 25°C unless otherwise indicated
CharacteristicConditionsSymbolMinTypMaxUnitsDrain–Source Breakdown VoltageVGS = 0 V, IDS = 10 µAV(BR)DSS65——V
Drain Leakage CurrentVDS = 28 V, VGS = 0 VIDSS——1.0µA
On–State ResistanceVGS = 10 V, VDS = 0.1 VRDS(on)—0.135—W
Operating Gate VoltageVDS = 28 V, IDQ = 800 mAVGS2.53.24.0V
Gate Leakage CurrentVGS = 10 V, VDS = 0 VIGSS—0.011.0µA
Maximum Ratings
ParameterSymbolValueUnitDrain–Source VoltageVDSS65V
Gate–Source VoltageVGS–0.5 to +12V
Junction TemperatureTJ200°C
Total Device DissipationPTF180601CPD159W
Above 25°C derate by0.91W/°C
Total Device DissipationPTF180601EPD180W
Above 25°C derate by1.03W/°C
Storage Temperature RangeTSTG–40 to +150°C
Thermal ResistancePTF180601CRqJC1.1°C/W
(TCASE = 70°C, 60 W CW)PTF180601E0.97°C/W
Typical Performance (measurements taken in production test fixture, at TCASE = 25°C unless otherwise indicated)
Typical Performance (cont.)
Typical Performance (cont.)
Broadband Circuit Impedance Data
