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PTF210901E
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
PTF210901E
Package 30248
PTF210901
DescriptionThe PTF210901 is an internally matched 90 W GOLDMOS FET
intended for WCDMA applications from 2110 to 2170 MHz. Full gold
metallization ensures excellent device lifetime and reliability.
FeaturesInternal matching for wideband performanceTypical two–carrier 3GPP WCDMAperformance
- Average output power = 19 W at –37 dBc
- Efficiency = 25%Typical CW performance
- Output power at P–1dB = 105 W- Gain = 15 dB
- Efficiency = 53%Integrated ESD protection: Human Body Model,
Class 1 (minimum)Excellent thermal stability, low HCI driftCapable of handling 10:1 VSWR at 28 V,
90 W (CW) output power
ESD: Electrostatic discharge sensitive device — observe handling precautions!
LDMOS RF Power Field Effect Transistor90 W, 2110–2170 MHz
RF Performance at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)VDD = 28 V, IDQ = 1050 mA, POUT = 19 W AVG
f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth 3.84 MHz, 8.0 dB peak/average @ 0.01% CCDF
CharacteristicSymbolMinTypMaxUnitsIntermodulation Distortion IMD—–37—dBc
GainGps—15—dB
Drain EfficiencyhD—25—%
Two–Tone Measurements (tested in Infineon test fixture)VDD = 28 V, IDQ = 1050 mA, POUT = 90 W PEP, f = 2170 MHz, tone spacing = 1 MHz
CharacteristicSymbolMinTypMaxUnitsGainGps13.515—dB
Electrical Characteristics at TCASE = 25°C unless otherwise indicated
CharacteristicConditionsSymbolMinTypMaxUnitsDrain–Source Breakdown VoltageVGS = 0 V, ID = 10 µAV(BR)DSS65——V
Drain Leakage CurrentVDS = 28 V, VGS = 0 VIDSS——1.0µA
On–State ResistanceVGS = 10 V, VDS = 0.1 VRDS(on)—0.1—W
Operating Gate VoltageVDS = 28 V, IDQ = 1050 mAVGS2.53.24.0V
Gate Leakage Current VGS = 10 V, VDS = 0 VIGSS—0.011.0µA
Maximum Ratings
ParameterSymbolValueUnitDrain–Source VoltageVDSS65V
Gate–Source VoltageVGS–0.5 to +12V
Junction TemperatureTJ200°C
Total Device DissipationPD389W
Above 25°C derate by2.22W/°C
Storage Temperature RangeTSTG–40 to +150°C
Thermal Resistance (TCASE = 70°C, 90 W CW)RqJC0.45°C/W
Typical Performance in broadband test fixture
Typical Performance (cont.)
Typical Performance (cont.)
Reference Circuit Schematic for f = 2140 MHz
Circuit Information
Test Circuit
Test Circuit (cont.)Reference Circuit1 (not to scale)
