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RFP3055哈利斯N/a92avai12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs


RFP3055 ,12A, 60V, 0.150 Ohm, N-Channel Power MOSFETsFeaturesMOSFETs• 12A, 60VThese are N-Channel enhancement mode silicon gate = 0.150Ω•rDS(ON)power fie ..
RFP3055 ,12A, 60V, 0.150 Ohm, N-Channel Power MOSFETsFeaturesMOSFETs• 12A, 60VThese are N-Channel enhancement mode silicon gate = 0.150Ω•rDS(ON)power fi ..
RFP3055 ,12A, 60V, 0.150 Ohm, N-Channel Power MOSFETsRFD3055, RFD3055SM, RFP3055Data Sheet July 1999 File Number 3648.212A, 60V, 0.150 Ohm, N-Channel Po ..
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RFP3055
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
RFD3055, RFD3055SM, RFP3055
12A, 60V, 0.150 Ohm, N-Channel Power
MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA49082.
Features
12A, 60V
DS(ON)
= 0.150 Temperature Compensating PSPICE
Model Peak Current vs Pulse Width Curve UIS Rating Curve 175
C Operating Temperature Related Literature TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information

NOTE: When ordering, use the entire part number. Add the suffix 9A,
to obtain the TO-252AA variant in tape and reel, i.e. RFD3055SM9A.
JEDEC TO-251AA JEDEC TO-252AA
JEDEC TO-220AB
GATE
DRAIN (FLANGE)
SOURCE
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