SGF40N60UFTU ,Discrete, High Performance IGBTFeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) UF• High Speed Switchingseries provides ..
SGH10N120RUFD ,Short Circuit Rated IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGH10N60RUFDTU ,Discrete, Short Circuit Rated IGBT with DiodeElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGH15N120RUFDTU ,Discrete, Short Circuit Rated IGBT with DiodeElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGH15N120RUFTU ,Discrete, Short Circuit Rated IGBTApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CG G ..
SGH15N60RUFD ,Short Circuit Rated IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SII1161CT100 , PanelLink Receiver
SII1161CT100 , PanelLink Receiver
SII1161CT100 , PanelLink Receiver
SII1390CTU , PanelLink /HDCP Transmitters
SII1390CTU , PanelLink /HDCP Transmitters
SII3531A , PCI Express to Serial ATA Controller
SGF40N60UFTU
Discrete, High Performance IGBT
SGF40N60UF October 2001 IGBT SGF40N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF • High Speed Switching series provides low conduction and switching losses. • Low Saturation Voltage : V = 2.1 V @ I = 20A CE(sat) C UF series is designed for the applications such as motor • High Input Impedance control and general inverters where High Speed Switching is required. Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls C C G G TO-3PF E E G C E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description SGF40N60UF Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage ± 20 V GES Collector Current @ T = 25°C40 A C I C Collector Current @ T = 100°C20 A C I Pulsed Collector Current 160 A CM (1) P Maximum Power Dissipation @ T = 25°C 100 W D C Maximum Power Dissipation @ T = 100°C40 W C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg Maximum Lead Temp. for Soldering T 300 °C L Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R Thermal Resistance, Junction-to-Case -- 1.2 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2001 SGF40N60UF Rev. A
