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SI1024X
Dual N-Channel 1.8-V (G-S) MOSFET
VISHAY
Si1024X
New Product
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
1.8-V Operation
Low Battery Voltage Operation
PRODUCT SUMMARY
Vos (V) rDS(on) (Q) ID (mA)
0.70 @ N/ss = 4.5 v 600
20 0.85 @ VGS = 2.5 v 500
1.25@VGS=1.8 v 350
FEATURES BENEFITS
. Very Small Footprint . Ease in Driving Switches
. High-Side Switching . Low Offset (Error) Voltage
q Low On-Resistance: 0.7 C2 o Low-Voltage Operation
0 Low Threshold: 0.8V (typ) o High-Speed Circuits
0 Fast Swtiching Speed: 10 ns .
Gate-Source ESD Protection
SOT-563
Top View
MOSFETs
TrencthlET®
1.8-V Rated
2000 V
APPLICATIONS
. Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
. Battery Operated Systems
. Power Supply Converter Circuits
o Load/Power Switching Cell Phones, Pagers
Marking Code: C
ESD Protected
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage Vos 20
Gate-Source Voltage VGS 21:6
TA = 25°C 515 485
Continuous Drain Current (T: = 150°C)a ID
TA = 85°C 370 350
Pulsed Drain Currentb IBM 650
Continuous Source Current (diode conduction) Is 450 380
TA = 25°C 280 250
Maximum Power Dissipation" PD mW
TA = 85°C 145 130
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximumjunction temperature.
Document Number: 71170
S-03104-Rev. A, 08-Feb-01
www.vishay.com
Si1024X
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS fra = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGS, ID = 250 pA 0.45 V
Gate-Body Leakage less VDs = 0 V, VGS = $45 V l 0.5 l 1.0 pA
fs-- 16V, VGS=0V 0.3 100 nA
Zero Gate Voltage Drain Current IDss
VDs=16\/,VGs=0V,TJ=85°C 5 pA
On-State Drain Currenta 'D(on) VDS = 5 V, VGS = 4.5 V 700 mA
VGS = 4.5 V, ID = 600 mA 0.41 0.70
Drain-Source On-State Resistancea roam) VGS = 2.5 V, ID = 500 m A 0.53 0.85 Q
VGs=1.8V,ID=350mA 0.70 1.25
Forward Transconductancea gfs Vos = 10 V, ID = 400 mA 1.0
Diode Forward Voltagea VSD ls = 150 mA, VGS = 0 V 0.8 1.2 V
Dynamicb
Total Gate Charge Q9 750
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 250 mA 75 pC
Gate-Drain Charge di 225
Turn-On Time ton VDD = 10 V, RL = 47 Q 10 ns
Turn-Off/s [OFF ID _ 200 mA, VGEN = 4.5 V, Rs = 10 Q 36
a. Pulse test; pulse width 5 300 05, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
1.0 1200 I I
s/''''" Tc---55l ///
0.8 I v 5th 1.8V /
GS-- ru . 2 D
A A 5 C \
S, l 800 I
"ii' 0.6 "i,:' 125°C
8 5 600
I' 0.4 '5
'i' Q. 400
0.2 , 200
1 V 2tf
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
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Document Number: 71170
S-03104-Reu A, 08-Feb-01
VISHAY
New Produc
Si1024X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS NOTED)
On-Resistance vs. Drain Current
a 3.2 f
ij?,- VGS = 1.8 V ",,.,,y'
0.8 VGS = 2.5 V -
VGS = 4.5 V
0 200 400 600 800 1000
ID - Drain Current (mA)
Gate Charge
Vros = 10 V
E ID = 250 mA /
0.0 0.2 0.4 0.6 0.8
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
Ts = 125°C
Is — Source Current (mA)
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2 1.4
C — Capacitance (pF)
rDS(on) - On-Resistance (Q)
rDS(on) — On-Resistance ( 9)
(Normalized)
Capacitance
VGS = 0 V
f= 1 MHz
60 _.--.-,
( Coss
0 4 8 12 16 20
I/os - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.40 VGS = 4.5 V
ID = 600 mA
/‘VGS = 1.8 v
lo = 350 mA
0.80 sa,,-""''''''
-50 -25 0 25 50 75 100 125
T J - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID = 350 mA
J' ID = 200 mA
0 1 2 3 4 5 6
VGS - Gate-to-Source Voltage (V)
Document Number: 71170
S-03104-Rev. A, 08-Feb-01
www.vishaycom
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS NOTED)
Threshold Voltage Variance vs. Temperature less vs. Temperature
0.3 3.0
ID = 0.25 mA o,//'
"s. 2.0
less - (MA)
V650,» Variance (V)
-0.3 0.0
-50 -25 0 25 50 75 100 125 -50 -25 O 25 50 75 100 125
T: - Temperature (°C) T: - Temperature (°C)
BVGSS vs. Temperature
BVGss — Gate—to—Source Breakdown Voltage (V)
-50 -25 O 25 50 75 100 125
T J - Temperature (°C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
ll' Duty Cycle = 0.5
.3 a 0
.g g Notes:
E a 0.1 T
u g PDM
I': (E 1
E 11 _
a -ly-1 te "
a 1. Duty Cycle, D = T
2. Per Unit Base = Rth0A = 500'C/W
' 3. TJM - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
Ity-A 10-3 10-2 IO-I 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71170
4 S-03104-Reu A, 08-Feb-01
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