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SI1025X
P-Channel 60-V (D-S) MOSFET
VISHAY
Si1025X
New Product
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
v(BR)DSS(min) (V) rDS(on) (Q) VGS(th) (V) In (mA)
-60 4 @ VGS = -10 v -1 to -31) -500
FEATURES BENEFITS
q High-Side Switching 0 Ease in Driving Switches
. Low On-Resistance: 4 f2 q Low Offset Voltage
. Low Threshold: -2 V (typ) o Low-Voltage Operation
. Fast Switching Speed: 20 ns (typ) o High-Speed Circuits
. Low Input Capacitance: 23 pF (typ) o Easily Driven 1/)fhyut Buffer
o Miniature Package q Small Board Area
0 Gate-Source ESD Protection
Top View
Vishay Siliconix
TrencthlET®
ESD Protected
OSFETs
APPLICATIONS
. Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
000 If
. Battery Operated Systems
. Power Supply Converter Circuits
q Solid-State Relays
Marking Code: D
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDs -60
Gate-Source Voltage VGS i 20
TA = 25°C -200 -190
Continuous Drain Current (TJ = 150°C)3 ID
TA = 85°C -145 -135
Pulsed Drain Currentb IBM -650
Continuous Source Current (diode conduction)a ls -450 -380
TA = 25°C 280 250
Maximum Power Dissipation" PD mW
TA = 85°C 145 130
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximumjunction temperature.
Document Number: 71433
S-03518-Rev. A, 23-Apr-01
www.vishaycom
. C=7'"
Si1025X VISHAY
Vishay Siliconix New Product
SPECIFICATIONS IT,, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -10 WA -60 V
Gate-Threshold Voltage VGSM VDS = VGS, ID = -0.25 mA -1 -3.0
VDs=0V,Vss= i1OV i200
Gate-Bod Leaka e I
y g GSS VDs=OV,VGS=:t5V i100
VDS = -50 V, N/ss = 0 V -25
Zero Gate Voltage Drain Current Koss
VDs=-50 V,VGS= 0V, TJ= 85°C -250
Vros=-10V,Vss=-4.5V -50
On-State Drain Currenta ID(on) mA
VDS = -10 V, VGS = -10 v -600
Vss=-4.5 V, Iro=-25 mA 8
Drain-Source On-Resistancea rDS(on) VGS = -1 0 V, ID = -500 mA 4 Q
Vss=-10V,lrs=-500 mA,TJ=125°C 6
Forward Transconductancea gfs VDS = -10 V, ID = -100 mA 100 m8
Diode Forward Voltagea VSD Is = -200 mA, VGS = 0 V -1.4 V
Dynamicb
Total Gate Charge Q9 1.7
Gate-Source Charge Qgs VDS = -30 V, VGS = -1 5 V, ID _ -500 mA 0.26 nC
Gate-Drain Charge di 0.46
Input Capacitance Ciss 23
Output Capacitance Coss V08 = -25 V, VGS = 0 V, f= 1 MHz 10 pF
Reverse Transfer Capacitance Crss 5
Switchingh c
Turn-On Time toN VDD = -25 V, RL = 150 Q 20
ID _ -165 mA, VGEN = -10 V ns
Turn-Off/e tOFF Rs = 10 g 35
a. Pulse test: PW s 300 ms duty cycle s2%.
b. For DESIGN AID ONLY, not subject to production testing.
C. Switching time is essentially independent of operating temperature,
www.vishay.com Document Number: 71433
2 S-03518-Rev. A, 23-Apr-01
VISHAY
Si1025X
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
| D — Drain Current (A)
rDS(on) — On-Resistance( S2)
V GS — Gate-to-Source Voltage (V)
Output Characteristics
1.0 I I
Vss = 10 v ,,-''"'"
0.3 8 VI //// s,,,,,---'''''"
0.6 tji),:),",',',:'',';' 6 v -
',,pp''''''''" 5 v
0.2 /,
0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
16 's,, VGS = 4.5 V
j I VGS = 5 V
Iff.,,,.,,-'' VGS = 10 v
0 200 400 600 800 1000
ID - Drain Current (mA)
Gate Charge
|D=|500mA, pd"
VDS=30V
i/VDS=48V
0.0 0.3 0.6 0.9 1.2 1.5 1.8
09 - Total Gate Charge (nC)
rDS(on) — On—Resistance( 52)
I D — Drain Current (mA)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
T J = -55c'C
ys 25°C
O 2 4 6 8 10
Vss - Gate-to-Source Voltage (V)
Capacitance
VGS = 0 V
y Ciss
16 \ N
_ Crss
0 5 IO 15 20 25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS= 10V@ 500
r..--''''''
-50 -25 0 25 50 75 100 125 150
T J - Junction Temperature (°C)
Document Number: 71433
S-03518-Rev. A, 23-Apr-01
www.vishay.com
Si1025X
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage
1000 10
VGS = 0 V
A 8 ID = 500 mA -
Ci.:] 100 Cl
tij, 8 6
'r, T J = 125°C fsi,
'k' g'
fl t 4 'ss
I 10 \TJ=25°C I k3=200mA "m----,...
T J = -55''C ffl
0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10
V39 - Source-to-Drain Voltage (V) VGs - Gate-to-Source Voltage (V)
Threshold Voltage Variance Over Temperature
ID = 250 WA /
0.1 o,,i'''
VGS(th)Variance (V)
-50 -25 0 25 50 75 100 125 150
T J - Junction Temperature (°C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
ii' o Duty Cycle = 0.5
uh', ' 0.2
ti, F, Notes:
RD g 0.1 -T-
a l? POM
= t1 _
2 _‘L_ ta t
1. Duty Cycle, D = T;
2. Per Unit Base = RmJA = 5000ClW
. 3. TJM - TA = PoMirtruA(t)
Single Pulse 4. Surface Mounted
IO-A 10-3 10-2 IO-I 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71433
4 S-03518-Rev. A, 23-Apr-01
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