SI1307DL ,P-Channel 1.8-V (G-S) MOSFET FaxBack 408-970-5600S-63637—Rev. A, 01-Nov-992-1YYSi1307DLNew ProductVishay Siliconix
SI1307DL
P-Channel 1.8-V (G-S) MOSFET
VISHAY
Si1307DL
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
Vros (V) rDS(on) (C2) ID (A)
0.290 @ Vss = -A.5 v i091
-12 0.435 @ v63 = -2.5 v i074
0.580 @ sz = -1.8 v i064
SOT-323
SC-70 (3-LEADS)
Top View
or, e6”
er bos
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -12
Gate-Source Voltage VGS i 8
TA=25°C i091 i085
Continuous Drain Current (To = 150°C)a ID
TA-- 70°C i072 10.68 A
Pulsed Drain Current IDM d: 3
Continuous Diode Current (Diode Conduction)a ls -0.28 -0.24
TA = 25°C 0.34 0.29
Maximum Power Dissipationa PD W
TA = 70°C 0.22 0.19
Operating Junction and Storage Temperature Range Tu, Tsig -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 315 375
Maximum Junction-to-Ambient" RthJA
Steady State 360 430 "C/W
Maximum Junction-to-Foot (Drain) Steady State Rm}: 285 340
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71077
S-63637-Reu A, 01-Nov-99
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Si1307DL
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa
= 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = VGS, ID = -250 [1A -0.45 V
Gate-Body Leakage less Vos = 0 V, VGS = cl: 8 V cl: 100 nA
VDS = -9.6 V, VGS = 0 V -1
Zero Gate Voltage Drain Current loss “A
VDS = -9.6 V, VGS = 0 V, TJ = 70°C -5
On-State Drain Currenta IDmn) VDS = -5 V, VGS = -A.5 V -3 A
VGS = -4.5 V, ID = -1 A 0.240 0.290
Drain-Source On-State Resistancea roman) VGS = -2.5 V, ID = -0.5 A 0.350 0.435 Q
VGS = -1.8 V, ID = -0.3A 0.480 0.580
Forward Transconductancea Ws VDS = -5 V, ID = -1 A 3.5
Diode Forward Voltage" VSD ls = -1 A, VGS = O V -1.2 V
Dynamicb
Total Gate Charge Q9 3.2 5
Gate-Source Charge Qgs Vros = -6 V, VGS = -4.5 V, ID = -1 A 0.59 nC
Gate-Drain Charge di 0.56
Turn-On Delay Time tdwn) 7.5 12
Rise Time tr VDD = -6 V, RL = 4 Q 32 45
Turn-Off Delay Tlme td(off) ID - -1 A, VGEN = -A.5 V, Rs = 6 Q 17 25 ns
Fall Time k 11.5 20
Source-Drain Reverse Recovery Time trr IF = -1 A, di/dt = 100 Alps 32 52
a. Pulse test; pulse width s 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 o c UNLESS NOTED)
Output Characteristics Transfer Characteristics
VGS'= 4.5 v I I l / f
4 V T = -55''C / /
"s-rt'.'.':,'..--- 5 C; l
6 w-'''"'' 3.5 v \/ /
2 Ct" 4 y
: 3 V : /
g g 125°C
. f . y)
3 4 / 3 3 y
O /'" 2 5 V 0 f
.E ' E
I / 2 V I 2
o 2 / o
- I - - -
1.5 V 1
0.5, 1 V
0 1 2 3 4 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
www.vishay.com . FaxBack 408-970-5600
Document Number: 71077
S-63637-Rev. A, OI-Nov-SN
VISHAY
Si1307DL
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
I VGS=1.8V VGS=2.5V C"
g 1.0 v
8 0 a g
ttt . ,
I 0.6 I / I
ij?,- 0 4 -,,w'''' // VGS = 4.5 v
co . css-''
" o,,----'''"''''
0 1 2 3 4 5 6 7
ID - Drain Current (A)
Gate Charge
v03 = 6 v
E ID = 1 A A
o pr c
8 .9 v
y 8 (-f,
Il 4 / t F,
g, ,,,,,w'''" I E
> -P'"
0 1 2 3 4 5
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
I s — Source Current (A)
rDS(0n) - On-Resistance (Q)
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Capacitance
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 I I
Vss--4.5V
s,,,,,--"'''''
1.2 m,.,,,,-'''''''''''''''''
w,,,--'''''"
w,--'"'''"'
0-8,.--
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 1 A
'ss.....
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
l/ss - Gate-to-Source Voltage (V)
Document Number: 71077
S-63637-Reu A, 01-Nov-99
www.vishay.com . FaxBack 408-970-5600
Si1307DL
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
ID = 250 WA
0.2 ops'''
0.1 v,,,,,,,''''''''''
Power (W)
VGS(th) Variance (V)
-50 -25 0 25 50 75 100 125 150
TJ - Temperature CC)
Single Pulse Power
1ty-3 1ty-2 1o-1 1 10 100 600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
-ly-1 _
1. Duty Cycle, D = T;
2, Per Unit Base = Rth0A = 360°CNV
3. TJM - TA = PDMZmJAm
4. Surface Mounted
10 100 600
g Duty Cycle = 0.5
IT, ID
Il a 0.2
i'i ' T
8 a 0.1 PDM
Single Pulse
10-4 10-3 10-2 10-1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
I' a 0.2
, E 0.1
Single Pulse
IO-A 10-3 1o-2
Square Wave Pulse Duration (sec)
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Document Number: 71077
S-63637-Rev. A, OI-Nov-SN
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