SI1403DL ,P-Channel 2.5-V (G-S) MOSFET FaxBack 408-970-5600S-01559—Rev. B, 17-Jul-002-1YYSi1403DLNew ProductVishay Siliconix
SI1403DL
P-Channel 2.5-V (G-S) MOSFET
VISHAY
Si1403DL
P-Channel 2.5-V (G-S) MOSFET
New Product
PRODUCT SUMMARY
Vros (V) rDS(on) (C2) ID (A)
0.180@Vss= -A.5 v $1.5
-20 0.200 @ v63 = -3.6 v i: 1.4
0.265 @ sz = -2.5 v d: 1.2
SOT-363
SC-70 (6-LEADS)
F} [30
Top View
Marking Code
XX it:
Lot Traceability
and Date Code
Part # Code
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -20
Gate-Source Voltage VGS i 12
TA=25°C i1.5 $1.4
Continuous Drain Current (To = 150°C)a ID
TA=85°C $1.2 110 A
Pulsed Drain Current IDM d: 5
Continuous Diode Current (Diode Conduction)a ls -0.8 -0.8
TA = 25°C 0.625 0.568
Maximum Power Dissipationa PD W
TA = 85°C 0.400 0.295
Operating Junction and Storage Temperature Range Tu, Tsig -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 165 200
Maximum Junction-to-Ambient" RthJA
Steady State 180 220 "C/W
Maximum Junction-to-Foot (Drain) Steady State Rm}: 105 130
a. Surface Mounted on 1" x 1" FR4 Board.
DocumentNumber: 71072
S-01559-Rev. B, 17-Jul-00
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Si1403DL
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = VGS, ID = -250 [1A -0.6 V
Gate-Body Leakage less Vos = 0 V, VGS = cl: 12 V cl: 100 nA
VDs=-16V,VGs=0V -1
Zero Gate Voltage Drain Current loss “A
VDs=-16VVGs=0V,To--850C -5
On-State Drain Currenta IDmn) VDS = -5 V, VGS = -A.5 V -2 A
VGs---4.5V, lox-ISA 0.145 0.180
Drain-Source On-State Resistancea roman) VGS = -3.6 V, ID = -1.4 A 0.165 0.200 Q
VGS = -2.5 v, ID = -0.8A 0.220 0.265
Forward Transconductancea Ws VDs = -10 V, ID = -1.5 A 3.8
Diode Forward Voltage" VSD ls = -0.8 A, VGS = 0 V -0.78 -1.1 V
Dynamicb
Total Gate Charge Q9 3.7 4.5
Gate-Source Charge Qgs Vos = -10 V, VGS = -A.5 V, ID = -1.5 A 0.9 nC
Gate-Drain Charge di 0.9
Turn-On Delay Time tdwn) 8 12
Rise Time tr VDD = -10 V, RL = 10 Q 25 40
Turn-Off Delay Tlme tam) '0 - -1 A, VGEN = -A.5 V, Rs = 6 Q 21 32 ns
Fall Time k 20 30
Source-Drain Reverse Recovery Time trr IF = -0.8 A, di/dt = 100 Alps 20 40
a. Pulse test; pulse width s 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 o c UNLESS NOTED)
Output Characteristics Transfer Characteristics
4.0 4.0 I I
/' Tc=-5fc /
v63: 5thru 2.5V 250C /
3.2 I 3.2 "ss
irg (/// iii] 125°C
E 2.4 E 2.4
o 2 V o
Es 1.6 v-''"'''''" E 1.6
0.8 I 0.8 /
1, 1.5 V v,,,//
0.8 1.6 2.4 3.2 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
www.vishay.com . FaxBack 408-970-5600
DocumentNumber: 71072
S-01559-Rev. B, 17-Jul-00
VISHAY
Si1403DL
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
rosmn) — On-Resistance ( Q)
VGS — Gate-to-Source Voltage (V)
| s — Source Current (A)
On-Resistance vs. Drain Current
0 1 2 3 4
ID - Drain Current (A)
Gate Charge
VDS = 10 V
ID = 1.5 A
0 1 2 3 4
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
Tu = 150°C
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(0n) — On-Resistance (Q)
rDS(0n) - On-Resistance (9)
(Normalized)
Capacitance
500 \Kciss
(cs Coss
100 's-Cr'-----
O 4 8 12 16 20
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 I I
VGS = 4.5 V
ID = 1.5 A
1.4 /1
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 0.8 A (
ID = 1.5 A
0.2 'tdc,,,,,
a""---...
0 1 2 3 4 5
l/ss - Gate-to-Source Voltage (V)
DocumentNumber: 71072
S-01559-Rev. B, 17-Jul-00
www.vishay.com . FaxBack 408-970-5600
Si1403DL
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
VGS(th) Variance (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
th4 10
0.3 /''' 8
ID = 250 “A ,,,,/''''
0.0 'ss,
Power (W)
-50 -25 0 25 50 75 100 125 150 Ity-e IO-l 1 IO 30
T J - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
513 Duty Cycle = 0.5
RD 0.2
8 g Notes:
El ' 0.1 T
8 a 0.1 PDM
(-i,' (E 0.05 l t
ly, -ly-1 t2 1
a 0.02 1. Duty Cycle, D = T,
2, Per Unit Base = Rth0A = 180°CNV
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
I' a 0.2
g E 0.1
le Pulse
IO-A 10-3 1H 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71072
S-01559-Rev. B, 17-Jul-00
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