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SI1553DL
Complementary 2.5-V (G-S) MOSFET
VISHAY
Si1553DL
Vishay Siliconix
Complementary 2.5-V (G-S) MOSFET
PRODUCT SUMMARY s1if
Vos (V) rDS(on) (Q) ID (A) eg?ft,'sis
0.385 @ VGS = 4.5 v 10.70 4 , at tlt is
N-Channel 20 90¢ $\e
0630 @ VGS = 2.5 v i054
0.995 © N/ss = -4.5 v 10.44 2..tr'
P-Channel -20
1.800 @ N/ss = -2.5 v i032
SOT-363
SC-70 (6-LEADS)
S1 1 I I 6 D1 Marking Code
G1 2 5 G2 Lot Traceability
and Date Code
D2 3 TI 4 S2 Part # Code
Top [few
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
N-Channel P-Channel
Parameter Symbol 5 secs Steady State 5 secs Steady State Unit
Drain-Source Voltage V93 20 -20 V
Gate-Source Voltage VGS i 12
TA-- 25°C $0.70 $0.66 $0.44 $0.41
Continuous Drain Current (To = 150°C)3 ID
a-- 85°C i050 1048 1031 i030
Pulsed Drain Current 'DM $1.0
Continuous Source Current (Diode Conduction)" Is 0.25 0.23 -0.25 -0.23
TA = 25°C 0.30 0.27 0.30 0.27
Maximum Power Dissipation" Pro W
TA=85°C 0.16 0.14 0.16 0.14
Operating Junction and Storage Temperature Range T J, Tsig -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 5 sec 360 415
M ' ' - -A V a R
ax1mum Junction to mblent Steady State WA 400 460 ''C11N
Maximum Junction-to-Foot (Drain) Steady State Rth 300 350
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71078 www.vishay.com
S-21374-Rev. D, 12-Aug-02
Si1553DL 'Gai';
Vishay Siliconix
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = Veg, ID = 250 11A N-Ch 0.6
Gate Threshold Voltage VSS(th) V V I 250 WA P Ch 0 6 V
DS = Gs, D= - - - V
N-Ch i100
Gate-Body Leakage less Vos = 0 V, Veg = d: 12 V P Ch i100 nA
I/rss = 16 V, VGS = 0 V N-Ch 1
VDS = -16 V, VGS = 0V P-Ch -1
Zero Gate Voltage Drain Current loss o 11A
VDs=16N/,VGs=0V,To--85oC N-Ch 5
VDS = -16 V, VGS = 0 V, To = 85°C P-Ch -5
V08 2 5 V, VGS = 4.5 V N-Ch 1.0
On-State Drain Currenta ID(on) V < 5 V V 4 5 V P Ch 1 0 A
DS _ - , GS = - . - - .
VGs = 4.5 V, ID = 0.66 A N-Ch 0.320 0.385
VGS = -4.5 V, ID = -0.41 A P-Ch 0.850 0.995
Drain-Source On-State Resistance" roam) V 2 5 V I 0 40 A N Ch 0 560 O 630 C2
GS = . , D = - - . .
VGS = -2.5 V, ID = -0.25 A P-Ch 1.4 1.800
VDs=10V,lD=0.66A N-Ch 1.5
Forward Transconductancea gfs V 10 V I 0 41 A P Ch 0 8 s
DS = - , D = - . - .
IS = 0.23 A, VCs = 0 v N-Ch 0.8 1.2
Diode Forward Voltagea VSD I 0 23 A V 0 V P Ch 0 8 1 2 V
s = - . , GS = - - . - .
Dynamicb
N-Ch 0.8 1.2
Total Gate Charge 09
N-Channel P-Ch 1.2 1.8
VDS = 10 V, VGS = 4.5 V, ID = 0.66 A N-Ch 0.06
Gate-Source Charge 095 P Channel P-Ch 0 45 nC
VDS = -10 V, I/ss = -4.5 V, ID = -0.41 A N-Ch 0.30
Gate-Drain Charge di P Ch 0 25
N-Ch 10 20
Turn-On Delay Time tum) P Ch 7 5 15
N-Channel N-Ch 16 30
Rise Time tr VDD = 10 V, RL = 20 Q
ID a 0.5 A, VGEN = 4.5 V, Rs = 6 Q P-Ch 20 40
. P-Channel N-Ch 10 20
Turn-Off Delay Time td(off) VDD = -10 V, RL = 20 Q P-Ch 8 5 17 ns
ID E -0.5 A, VGEN = -4.5 V, RG = 6 Q .
N-Ch 1O 20
Fall Tlme tf P Ch 12 24
Source-Drain t IF = 0.23 A, di/dt = 100 Alps N-Ch 20 40
Reverse Recovery Time rr IF = -o.23 A, di/dt = 100 Alps P-Ch 25 40
a. Pulsetest; pulse width 5 300 us. duty cycle S 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 71078
2-2 S-21374-Rev. D, 12-Aug-02
“3% Si1553DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25° C UNLESS NOTED) N-CHANNEL
Output Characteristics Transfer Characteristics
1.0 _ l 1.0
Vas = 51hru 2.5 v
0.8 I 0.8
.cjC:'C. 2 V ii:.
E 0.6 E 0.6
5 f, / 5
E 0.4 E 0.4
' ' Tc = 125°C
- 0.2 1 5 v - " 25°C /
ic'i,,.,,si,s,i,,/,/f/' -55 I
0.0 0.0 1 l
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
1.0 100
E 0.8 A 80 \
g 'ty..
Ie-',. - g Ciss
'E 0.6 N/cs - 2.5 V .9, 60 \
c, 0.4 VGS=4-5V - I 40
(T) 't Cass
0.2 20
'ss....,..,
0.0 0.2 0.4 0.6 0.8 1.0 O 4 8 12 16 20
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 I 1.6 _ _
F VD3=10V VG3=4.5V
v ID=0.66A A ko=0.66A
'l) 4 g 1.4 /
E " 8 "
8 5‘5 '/d
to 3 8 '7; 1.2
T /'''" 5 g
s, o fl
io, / ' v .,,,,,,ww'''''
m 2 1.0
CD ' E ',,,,,w'''''"
o 1 '- 0 8 o,,--''''''
0.0 0.2 0.4 0.6 0.8 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature CC)
Document Number: 71078 www.vishay.com
S-21374-Rev. D, 12-Aug-02 2-3
Si1553DL
IE=7'"
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
A a 0.8
ssl:, I
g g ID = 0.66 A
g 7.5 0.6
o T J = 150°C 8 Iss,
JI C? 0.4 "s,,.,.
I A "ss.....
0.1 0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.1 "s, 4
ID = 250 luA
i1 -0.0
Ji, "s. ir, l
tD -0 1 a
> 'N t
"ij..] "ss, m 2 t
8 -o 2 _ N
-0.3 'N
-0.4 o
-50 -25 O 25 50 75 100 125 150 IO- 3 IO- 2 IO-l 1 10 100 600
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-1 1
Square Wave Pulse Duration (sec)
10-4 10-3 10-2
Notes:
1. Duty Cycle, D = T
2. Per Unit Base = RthJA =400°CIW
3. TJM - TA = PDMZIhJAm
4. Surface Mounted
10 100 600
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DocumentNumber: 71078
S-21374-Rev. D, 12-Aug-02
“3% Si1553DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Foot
Ii Duty Cycle = 0.5
S '', 0.2
"f',' E
't,'iit 0.1
8 o 0.1 .05
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS ttttV c UNLESS NOTED) P-CHANNEL
Output Characteristics Transfer Characteristics
1.0 _ _ 1.0 _ _
f( VGS = 5thru 3 V TC = .5500 /
0.8 f 2.5 v 0.8 25'C
E 0.6 // 05 0.6 y
6' i,'ft/,,', ?l 125°C
0.2 I 0.2
1 V 1 5 V
0.0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
3.0 I 100
f?.. 2.5 80 (
'li' / 'ii' 's..,,..,..., Ciss
E' 2.0 8
ii VCs = 2.5 v f g 60
O 1.5 g
"ii] -''' VGS = 3.6 V CI) 40
:8 1.0 It Coss
V = 4. V
GS 5 20 "s-.,...
0.5 Ns., .--,
Crss .--,
0.0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Document Number: 71078
www.vishay.com
S-21374-Rev. D, 12-Aug-02
Si1553DL
IE=7'"
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Gate Charge On-Resistance vs. Junction Temperature
5 1 1 A" 1.6 1 1
' VDS=10V VGS=4.5V
V ID = 0.41 A / A ID = 0.41 A
tD Ct l
CD 4 v 1.4
g l o "
> g G'
8 E h'
S 3 g '7; 1.2
c?) ttt E
g 8 stir
g. _ , v
m 2 I 1.0
> 1 l 0.8 ,,,,-''"
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 -25 0 25 50 75 100 125 150
O9 - Total Gate Charge (nC) To - Junction Temperature (°C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
5.t2 E
F, g 2.0 ID = 0.41 A
'g Er'
Q TJ = 150°C g
g 0,: 1.5
S 6 N,
I e 1 0 'ss.,,,,.
- J) ''"'s-.,.,.
0.1 0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 5 ,
0.3 /''" 4
ID = 250 0A
S" o,,,,''''
I 0.2 "
g ',,,,,w'''' g 3 l
E 0.1 I ' \
g? s,,,,,.'''" £3 2 k
-0.1 's
-0.2 O
-50 -25 0 25 50 75 100 125 150 IO- 3 1ty2 IO-l 1 10 100 600
T J - Temperature (°C) Time (sec)
www.vishay.com Document Number: 71078
2-6 S-21374-Rev. D, 12-Aug-02
“3% Si1553DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
h' 'i. 0.2
"g E Notes:
- 0.1 T
T7 -_ PDM
M fE l
5 -lt-I t2
a 1. Duty Cycle, D = T;
2. Per Unit Base = RthJA = 400°CIW
. 3. TJM - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li' Duty Cycle = 0.5
212 0.2
if',' g
E ' 0.1
B lg 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71078
www.vishay.com
S-21374-Rev. D, 12-Aug-02
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